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umf5


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                                                                                                                               UMF5N
General purpose transistors (dual transistors)

FEATURES                                                                                                   SOT-363
         2SA2018 and DTC144E are housed independently in a package.
         Mounting possible with SOT-363 automatic mounting machines.
         Transistor elements are independent, eliminating interference.
         Mounting cost and area be cut in half.                                                                      1




                                                                 (3)                    (2)   (1)
Marking: F5

                                                             DTr2                               Tr1
Equivalent circuit                                                           R1

                                                                       R2

                                                                 (4)              (5)         (6)



Tr1 Absolute maximum ratings (Ta=25)

     Symbol                Parameter              Value          Units
    VCBO         Collector-Base Voltage                -15             V
    VCEO         Collector-Emitter Voltage             -12             V
    VEBO         Emitter-Base Voltage                  -6              V
    IC           Collector Current                 -500             mA
    PC           Collector Power Dissipation       150              mW
    TJ           Junction Temperature              150                 
    Tstg         Storage Temperature             -55-150               

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

               Parameter                       Symbol                       Test              conditions     Min         Typ       Max         Unit

 Collector-base breakdown voltage              V(BR)CBO      IC=-10A, IE=0                                   -15                                V

 Collector-emitter breakdown voltage           V(BR)CEO      IC=-1mA, IB=0                                   -12                                V

 Emitter-base breakdown voltage                V(BR)EBO      IE=-10A, IC=0                                   -6                                 V

 Collector cut-off current                       ICBO        VCB=-15V, IE=0                                                        -0.1        A

 Emitter cut-off current                         IEBO        VEB=-6V, IC=0                                                         -0.1        A

 DC current gain                                 hFE         VCE=-2V, IC=-10mA                               270                   680

 Collector-emitter saturation voltage          VCE(sat)      IC=-200mA, IB=-10mA                                                  -0.25         V

 Transition frequency                             fT         VCE=-2V, IE=-10mA, f=100MHz                                 260                   MHz

 Collector output capacitance                    Cob         VCB=-10V, IE=0, f=1MHz                                      6.5                   pF


1
JinYu                                          www.htsemi.com
semiconductor

                                                                                                                               Date:2011/ 05
                                                                                        UMF5N

Tr2 Absolute maximum ratings(Ta=25)

        Parameter        Symbol                              Limits                                Unit
Supply voltage             VCC                                50                                       V
Input voltage               VIN                             -10~+40                                    V
                               IO                             30
Output current                                                                                     mA
                         IC(MAX)                              100
Power dissipation           Pd                                150                                  mW
Junction temperature           Tj                             150                                   
Storage temperature        Tstg                             -55~150                                    

Electrical characteristics (Ta=25)

     Parameter         Symbol        Min.    Typ      Max.          Unit           Conditions
                        VI(off)                       0.5                        VCC=5V, IO=100A
Input voltage                                                         V
                        VI(on)       3.0                                         VO=0.3V, IO=2mA
Output voltage          VO(on)               0.1      0.3             V          IO/II=10mA/0.5mA
Input current             II                          0.18          mA                VI=5V
Output current          IO(off)                       0.5           A             VCC=50V, VI=0
DC current gain           GI         68                                           VO=5V, IO=5mA
Input resistance         R1          32.9     47      61.1          K                   -
Resistance ratio        R2/R1        0.8      1       1.2                               -
Transition frequency      fT                 250                    MHz    VCE=10V, IE=-5mA, f=100MHz




 2
JinYu                                www.htsemi.com
semiconductor

                                                                                       Date:2011/ 05



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