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                                                                                                        UMH15N
    DIGITAL TRANSISTOR (NPN+ NPN)


                                                                                           SOT-363

 FEATURES
 z   Two DTC144T chips in a package
 z   Transistor elements are independent, eliminating interference                             1
 z   Mounting cost and area can be cut in half.

 External circuit




 MARKING: H15

 Absolute maximum ratings(Ta=25)

                 Parameter                 Symbol      Limits          Unit

    Collector-base     voltage             V(BR)CBO        50           V
    Collector-emitter voltage              V(BR)CEO        50           V
    Emitter-base     voltage               V(BR)EBO          5          V
    Collector current                         IC           100         mA

    Collector Power dissipation               PC           150         mW

    Junction temperature                      Tj           150         
    Storage temperature                      Tstg     -55~150          

 Electrical characteristics (Ta=25)

                 Parameter                 Symbol     Min.       Typ    Max.    Unit           Conditions
    Collector-base breakdown voltage       V(BR)CBO   50                          V             IC=50A
    Collector-emitter breakdown voltage    V(BR)CEO   50                          V                IC=1mA
    Emitter-base breakdown voltage         V(BR)EBO    5                          V             IE=50A
    Collector cut-off current                ICBO                         0.5    A              VCB=50V
    Emitter cut-off current                  IEBO                         0.5    A                 VEB=4V
    Collector-emitter saturation voltage   VCE(sat)                       0.3     V         IC=10mA,IB=1mA
    DC current transfer ratio                hFE      100                 600                VCE=5V,IC=1mA
    Input resistance                         R1       32.9       47      61.1   K
    Transition frequency                      fT                 250            MHz    VCE=10V ,IE=-5mA,f=100MHz


1
JinYu                                        www.htsemi.com
semiconductor

                                                                                                       Date:2011/ 05

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