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                                                                                                                                    A42

                                                                                    SOT-89-3L
    TRANSISTOR (NPN)

    FEATURES                                                                        1. BASE
       Low Collector-Emitter Saturation Voltage
       High Breakdown Voltage                                                       2. COLLECTOR

                                                                                    3. EMITTER


    MAXIMUM RATINGS (Ta=25 unless otherwise noted)

      Symbol                          Parameter                         Value        Unit
        VCBO      Collector-Base Voltage                                    310        V
        VCEO      Collector-Emitter Voltage                                 305        V
        VEBO      Emitter-Base Voltage                                        5        V
         IC       Collector Current                                         500       mA
         PC       Collector Power Dissipation                               500       mW
        RJA       Thermal Resistance From Junction To Ambient               250      /W
         Tj       Junction Temperature                                      150        
        Tstg      Storage Temperature                                  -55~+150        


    ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

               Parameter                          Symbol        Test   conditions             Min        Typ              Max        Unit
     Collector-base breakdown voltage             V(BR)CBO    IC=100

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