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TRANSISTOR                 (NPN)                                                       SOT-89-3L

                                                                                       1. BASE
   Low Collector-Emitter Saturation Voltage
   High Breakdown Voltage                                                              2. COLLECTOR

                                                                                       3. EMITTER


MAXIMUM RATINGS (Ta=25 unless otherwise noted)

  Symbol                           Parameter                                Value       Unit
    VCBO       Collector-Base Voltage                                        500          V
    VCEO       Collector-Emitter Voltage                                     400          V
    VEBO       Emitter-Base Voltage                                           6           V
        IC     Collector Current                                             300         mA
        PC     Collector Power Dissipation                                   500         mW
    RJA        Thermal Resistance From Junction To Ambient                   250        /W
        Tj     Junction Temperature                                          150          
    Tstg       Storage Temperature                                      -55~+150          

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

             Parameter                         Symbol           Test   conditions                Min   Typ   Max                  Unit
 Collector-base breakdown voltage              V(BR)CBO       IC=100

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