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                                                                                                                                        A733

         TRANSISTOR (PNP)                                                                    SOT-23


         FEATURE
           Collector-Base Voltage                                                            1. BASE
           Complement to C945                                                                2. EMITTER
                                                                                             3. COLLECTOR


    MAXIMUM RATINGS(TA=25 unless otherwise noted)

    Symbol                   Parameter                      Value             Units
    VCBO         Collector-Base Voltage                      -60                  V
    VCEO         Collector-Emitter Voltage                   -50                  V
    VEBO         Emitter-Base Voltage                         -5                  V
    IC           Collector Current -Continuous               -150                 mA
    PC           Collector Power Dissipation                 200              mW
    Tj           Junction Temperature                        150                  
    Tstg         Storage Temperature                       -55-150                

    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                    Parameter                      Symbol             Test    conditions        MIN      TYP                    MAX      UNIT

         Collector-base breakdown voltage         V(BR)CBO          IC= -5uA,IE=0               -60                                       V

         Collector-emitter breakdown voltage      V(BR)CEO          IC= -1mA , IB=0             -50                                       V

         Emitter-base breakdown voltage           V(BR)EBO          IE= -50uA, IC=0             -5                                        V

         Collector cut-off current                   ICBO           VCB= -60 V , IE=0                                           -0.1     uA

         Emitter cut-off current                     IEBO           VEB= -5 V ,       IC=0                                      -0.1     uA

         DC current gain                             hFE            VCE= -6 V, IC= -1mA         120                             475

         Collector-emitter saturation voltage      VCE(sat)         IC= -100mA, IB=- 10mA               -0.18                   -0.3      V

         Base-emitter voltage                      VBE(on)          VCE=-6V,IC=-1.0mA          -0.58    -0.62                   -0.68     V

         Transition frequency                         fT            VCE=-6V,IC=-10mA            50                                       MHz

         Collector output capacitance                Cob            VCB=-10V,IE=0,f=1MHZ                   4.5                   7        pF

                                                                    VCE=-6V,IC=-0.3mA,
         Noise figure                                NF                                                    6                     20       dB
                                                                    Rg=10k,f=100HZ



    CLASSIFICATION OF hFE
         Rank                                        L                                                 H

         Range                                    120-220                                            220-475

         MARKING                                                                      CS


1




JinYu                                            www.htsemi.com
semiconductor

                                                                                                                 Date:2011/05
                                           A733
Typical Characteristics




2




JinYu                     www.htsemi.com
semiconductor

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