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bcx69


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                                                                                                                                              BCX69

         TRANSISTOR (PNP)

     FEATURES                                                                                  SOT-89
          For general AF applications
          High collector current                                                               1. BASE
          High current gain
          Low collector-emitter saturation voltage
                                                                                               2. COLLECTOR      1
          Complementary type: BCX68 (NPN)
                                                                                                                     2
                                                                                               3. EMITTER                               3

    MAXIMUM RATINGS (TA=25 unless otherwise noted)

     Symbol                   Parameter               Value             Units
    VCBO           Collector-Base Voltage               -25              V
    VCEO           Collector-Emitter Voltage            -20              V
    VEBO           Emitter-Base Voltage                 -5               V
    IC             Collector Current -Continuous        -1               A
    PC             Collector Dissipation                0.8              W
    TJ             Junction Temperature                150               
    Tstg           Storage Temperature                -65-150            

    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                   Parameter                            Symbol            Test    conditions       MIN        TYP        MAX                 UNIT

         Collector-base breakdown voltage               V(BR)CBO        IC=-10A , IE=0              -25                                       V

         Collector-emitter breakdown voltage            V(BR)CEO        IC=-30mA , IB=0             -20                                       V

         Emitter-base breakdown voltage                 V(BR)EBO        IE=-1A, IC=0                -5                                        V

         Collector cut-off current                        ICBO          VCB=-25V, IE=0                                       -0.1            A

         Emitter cut-off current                          IEBO          VEB=-5V, IC=0                                        -0.1            A
         DC current gain                   BCX69                                                    85                        375
                                           BCX69-10                1)                               85                        160
                                                        hFE (1)         VCE=-1V, IC=-500mA
                                           BCX69-16                                                100                        250
                                           BCX69-25                                                160                        375
                                                                  1)
                                                        hFE(2)          VCE=-10V, IC=-5mA           50

                                                        hFE(3) 1)       VCE=-1V, IC=-1A             60

         Collector-emitter saturation voltage            VCE(sat)       IC=-1A, IB=-100mA                                    -0.5             V

                                                                   1)
                                                                        IC=-5mA, VCE=-10V                     -0.6
         Base-emitter      voltage                     VBE(ON)                                                                                V
                                                                        IC=-1A, VCE=-1V                                                 -1
                                                                         VCE=-5V, IC=-100mA
         Transition frequency                                fT                                               100                            MHz
                                                                        f=20MHz
    1)
           Pulse test: t =300



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