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bcx70j


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                                                                                                            BCX7 0J,K


    TRANSISTOR (NPN)
                                                                                               SOT-23
    FEATURES
       Low current
       Low voltage
                                                                                               1. BASE
                                                                                               2. EMITTER
                                                                                               3. COLLECTOR
    MARKING : BCX70JAJ, BCX70K:AK

    MAXIMUM RATINGS (TA=25 unless otherwise noted)

           Symbol                                   Parameter                                    Value             Units
    VCBO                Collector-Base Voltage                                                    45                   V
    VCEO                Collector-Emitter Voltage                                                 45                   V
    VEBO                Emitter-Base Voltage                                                       5                   V
    IC                  Collector Current -Continuous                                             200               mA
    PC                  Collector Power Dissipation                                               250               mW
    Tj                  Junction Temperature                                                      150                  
    Tstg                Storage Temperature                                                     -55-150                

    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                           Symbol            Test    conditions          MIN       TYP   MAX      UNIT
     Collector-base breakdown voltage               V(BR)CBO    IC=10A,IE=0                        45                       V
     Collector-emitter breakdown voltage            V(BR)CEO    IC=2mA,IB=0                        45                       V
     Emitter-base breakdown voltage                 V(BR)EBO    IE=1A,IC=0                          5                       V
     Collector cut-off current                        ICES      VCE=45V,VBE=0                                     20       nA
                                                      hFE1      VCE=5V,IC=10A                      30
     DC current gain        BCX70J                    hFE2      VCE=5V,IC=2mA                      250            460
                                                      hFE3      VCE=1V,IC=50mA                     90
                                                      hFE1      VCE=5V,IC=10A                      100
     DC current gain        BCX70K                    hFE2      VCE=5V,IC=2mA                      380            630
                                                      hFE3      VCE=1V,IC=50mA                     100
                                                    VCE(sat)1   IC= 10mA IB= 0.25 mA              0.05            0.35      V
     Collector-emitter saturation voltage
                                                    VCE(sat)2   IC= 50mA IB=1.25 mA                0.1            0.55      V
                                                    VBE(sat)1   IC= 10mA IB=-0.25 mA               0.6            0.85      V
     Base -emitter saturation voltage
                                                    VBE(sat)2   IC= 50mA IB= 1.25 mA               0.7            1.05      V
     Base-emitter voltage                             VBE       VCE=5V,IC=2mA                     0.55            0.75      V
     Collector output capacitance                     Cob       VCB=10V,IE=0,f=1MHz                         1.7            pF
                                                                VCE=5V,IC=200A,
     Noise Figure                                     NF                                                           6       dB
                                                                f=1KHz,BW=200Hz,RS=2K
     Gain-Bandwidth Product                            fT       VCE= 5 V, IC=10mA,f =100 MHz       100      250            MHz




1




JinYu                                            www.htsemi.com
semiconductor
                                      BCX7 0J,K

Typical Characteristics




2




JinYu                www.htsemi.com
semiconductor

                                       Date:2011/05
                                 BCX7 0J,K




3




JinYu           www.htsemi.com
semiconductor

                                  Date:2011/05



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