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                                                                                                            BC847BV
 DUAL TRANSISTOR (NPN)

                                                                                                  SOT-563

 FEATURES
     Epitaxial Die Construction
      Complementary PNP Type Available
         (BC857BV)
     Ultra-Small Surface Mount Package


    Marking: K4V
    MAXIMUM RATINGS(TA=25 unless otherwise noted)
     Symbol                       Parameter                             Value        Units
     VCBO        Collector-Base Voltage                                   50          V
     VCEO        Collector-Emitter Voltage                                45          V
     VEBO        Emitter-Base Voltage                                      6          V
     IC          Collector Current -Continuous                           0.1          A
     PC          Collector Power Dissipation                             0.15         W
     RJA         Thermal Resistance. Junction to Ambient Air             833         /W
     TJ          Junction Temperature                                    150          
     Tstg        Storage Temperature                                  -55 to +150     

 ELECTRICAL CHARACTERISTICS (Tamb=25                              unless        otherwise    specified)

               Parameter                          Symbol       Test     conditions                 MIN    TYP   MAX       UNIT

    Collector-base breakdown voltage              V(BR)CBO   IC=10A,IE=0                           50                       V

    Collector-emitter breakdown voltage           V(BR)CEO   IC=10mA,IB=0                          45                       V

    Emitter-base breakdown voltage                V(BR)EBO   IE=1A,IC=0                             6                       V

    Collector cut-off current                       ICBO     VCB=30V,IE=0                                         15       nA

    Emitter cut-off current                         IEBO     VEB=5V,IC=0                                         100       nA

    DC current gain                                hFE(1)    VCE=5V,IC=2mA                         200           450
                                                             IC=10mA,IB=0.5mA                                    100
    Collector-emitter saturation voltage          VCE(sat)                                                                 mV
                                                             IC=100mA,IB=5mA                                     300
                                                             IC=10mA,IB=0.5mA                             700
    Base-emitter saturation voltage               VBE(sat)                                                                 mV
                                                             IC=100mA,IB=5mA                              900
                                                             VCE=5V,IC=2mA                         580    660    700
    Base-emitter voltage                            VBE                                                                    mV
                                                             VCE=5V,IC=10mA                                      770
    Transition frequency                             fT      VCE=5V,IC=10mA,f=100MHz               100                    MHz

    Output    capacitance                           Cob      VCB=10V,IE=0,f=1MHz                                 4.5       pF
                                                             VCE=5V,Rs=2k,
    Noise Figure                                    NF                                                            10       dB
                                                             f=1kHz,BW=200Hz



1
JinYu                                            www.htsemi.com
semiconductor

                                                                                                                Date:2011/ 05
                                            BC847BV


 Typical Characteristics




2
JinYu                      www.htsemi.com
semiconductor

                                              Date:2011/ 05

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