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    Multi-chip transistor (NPN)

    APPLICATION                                                                                                    C1

        This device is designed for general purpose amplifier applications                                                    E2

     Marking :1C                                                                                        E1

     MAXIMUM RATINGS (Ta=25 unless otherwise noted)
       Symbol                          Parameter                            Value      Units

         VCBO          Collector-Base Voltage                                   50

         VCEO          Collector-Emitter Voltage                                45      V

         VEBO          Emitter-Base Voltage                                     6

           IC          Collector Current-Continuous                            200      mA

          PD           Power Dissipation                                       200     mW

         RJA           Thermal Resistance. Junction to Ambient                 625     /W
           Tj          Junction Temperature                                    150
          Tstg         Storage Temperature Range                          -55~+150

     ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
                 Parameter                         Symbol          Test   conditions           Min      Typ             Max        Unit

    Collector-base breakdown voltage               V(BR)CBO      IC=10

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