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BC847S
Multi-chip transistor (NPN)
SOT-363
APPLICATION C1
B2
This device is designed for general purpose amplifier applications E2
Marking :1C E1
B1
C2
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 50
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 6
IC Collector Current-Continuous 200 mA
PD Power Dissipation 200 mW
RJA Thermal Resistance. Junction to Ambient 625 /W
Tj Junction Temperature 150
Tstg Storage Temperature Range -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=10◦ Jabse Service Manual Search 2024 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo