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                                                                                                        BC857BV
DUAL TRANSISTOR (PNP)


FEATURES                                                                                      SOT-563
    Epitaxial Die Construction
    Complementary NPN Types Available
    (BC847BV)
    Ultra-Small Surface Mount Package


Marking: K5V

 MAXIMUM RATINGS (TA=25 unless otherwise noted )
    Symbol                       Parameter                               Value        Units
    VCBO        Collector-Base Voltage                                    -50          V
    VCEO        Collector-Emitter Voltage                                 -45          V
    VEBO        Emitter-Base Voltage                                       -5          V
    IC          Collector Current -Continuous                             -0.1         A
    PC          Collector Power Dissipation                               0.15         W
    RJA         Thermal Resistance. Junction to Ambient Air               833         /W
    TJ          Junction Temperature                                      150          
    Tstg        Storage Temperature                                    -55 to +150     

ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)

             Parameter                          Symbol          Test     conditions           MIN    TYP     MAX       UNIT

 Collector-base breakdown voltage               V(BR)CBO      IC=-10A,IE=0                    -50                           V

 Collector-emitter breakdown voltage            V(BR)CEO      IC=-10mA,IB=0                   -45                           V

 Emitter-base breakdown voltage                 V(BR)EBO      IE=-1A,IC=0                      -5                           V

 Collector cut-off current                        ICBO        VCB=-30V,IE=0                                   -15       nA

 DC current gain                                   hFE        VCE=-5V,IC=-2mA                 220             475

                                                VCE(sat)(1)   IC=-10mA,IB=-0.5mA                              -0.1          V
 Collector-emitter saturation voltage
                                                VCE(sat)(2)   IC=-100mA,IB=-5mA                               -0.4          V

                                                VBE(sat)(1)   IC=-10mA,IB=-0.5mA                     -0.7                   V
 Base-emitter saturation voltage
                                                VBE(sat)(2)   IC=-100mA,IB=-5mA                      -0.9                   V

                                                  VBE(1)      VCE=-5V,IC=-2mA                 -0.6           -0.75          V
 Base-emitter voltage
                                                  VBE(2)      VCE=-5V,IC=-10mA                               -0.82          V

 Transition frequency                               fT        VCE=-5V,IC=-10mA,f=100MHz       100                      MHz

 Collector output capacitance                      Cob        VCB=-10V,IE=0,f=1MHz                            4.5       pF
                                                              VCE=-5V,Ic=-0.2mA,
 Noise figure                                      NF                                                          10       dB
                                                              f=1kHZ,Rs=2K,BW=200Hz

1
JinYu                                           www.htsemi.com
semiconductor

                                                                                                            Date:2011/ 05
                                               BC857BV


    Typical Characteristics




2
JinYu                         www.htsemi.com
semiconductor

                                               Date:2011/ 05

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