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                                                                                                       BC857S
 Multi-Chip TRANSISTOR (PNP)



                                                                                       SOT-363
 FEATURES
   Power dissipation
                                                                                                       C1
                                                                                                            B2
                   PCM     : 300       mW(Tamb=25)                                                               E2



      Collector current                                                                      E1
                 ICM      : -200    mA                                                            B1
                                                                                                       C2
      Collector-base voltage
                 V(BR)CBO : -50    V
      Operating and storage junction temperature range

                   TJ,Tstg: -55to +150

 MARKING: 3C

 ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified)

              Parameter                     Symbol          Test   conditions         MIN    TYP            MAX       UNIT

    Collector-base breakdown voltage        V(BR)CBO      Ic=-10

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