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bc868


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                                                                                                                           BC868
    TRANSISTOR (NPN)
                                                                                            SOT-89
    FEATURES
       High current
       Low voltage

                                                                                            1. BASE
MAXIMUM RATINGS (TA=25 unless otherwise noted)                                              2. COLLECTOR
                                                                                            3. EMITTER
     Symbol                Parameter                   Value       Units
     VCBO       Collector-Base Voltage                   32          V
     VCEO       Collector-Emitter Voltage                20          V
     VEBO       Emitter-Base Voltage                         5       V
     IC         Collector Current -Continuous                1       A
     PC         Collector Power Dissipation              500        mW
     TJ         Junction Temperature                     150         
     Tstg       Storage Temperature                   -55-150        

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                          Symbol            Test    conditions           MIN      TYP                MAX     UNIT

    Collector-base breakdown voltage             V(BR)CBO        IC=100A,IE=0                    32                                  V

    Collector-emitter breakdown voltage          V(BR)CEO        IC=1mA,IB=0                     20                                  V

    Emitter-base breakdown voltage               V(BR)EBO        IE=100A,IC=0                     5                                  V

    Collector cut-off current                         ICBO       VCB=25V,IE=0                                                0.1    A

    Emitter cut-off current                           IEBO       VEB=5V,IC=0                                                 0.1    A

                                                      hFE(1)     VCE=1V,IC=500mA                 85                          375

    DC current gain                                   hFE(2)     VCE=1V,IC=1A                    60

                                                      hFE(3)     VCE=10V,IC=5mA                  50

    Collector-emitter saturation voltage            VCE(sat)     IC=1A,IB=100mA                                              0.5     V

                                                      VBE1       VCE=10V,IC=5mA                          0.62                        V
    Base-emitter voltage
                                                      VBE2       VCE=1V,IC=1A                                                   1    V

    Transition frequency                                fT       VCE=5V,IC=10mA,f=100MHz         40                                 MHz

    CLASSIFICATION OF           hFE(1)
    Rank                                    BC868-10                            BC868-16                                BC868-25

    Range                                    85-160                               100-250                               160-375

    Marking                                   CBC                                  CCC                                    CDC


1




JinYu                                            www.htsemi.com
semiconductor

                                                                                                           Date:201/5
                                                            BC868

    Typical Characteristics




2




JinYu                         www.htsemi.com
semiconductor

                                               Date:201/5



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