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bc818


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                                                                                                                                             BC881

TRANSISTOR (NPN)

BC818-16                                                                                              SOT-23
BC818-25
BC818-40
                                                                                                      1. BASE
                                                                                                      2. EMITTER
    FEATURES                                                                                          3. COLLECTOR
         For general AF applications
         High collector current
         High current gain
         Low collector-emitter saturation voltage


    MAXIMUM RATINGS (TA=25 unless otherwise noted)
           Symbol                  Parameter                        Value        Units
    VCBO                 Collector-Base Voltage                      30              V
    VCEO                 Collector-Emitter Voltage                   25              V
    VEBO                 Emitter-Base Voltage                        5               V
    IC                   Collector Current -Continuous               0.5             A
    PC                   Collector Power Dissipation                 0.3             W
    Tj                   Junction Temperature                       150              
    Tstg                 Storage Temperature                      -55-150            

    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                 Parameter                               Symbol               Test       conditions      MIN                                 MAX     UNIT
    Collector-base breakdown voltage                       VCBO             IC= 10A, IE=0                  30                                         V
    Collector-emitter breakdown voltage                    VCEO             IC= 10mA, IB=0                 25                                         V
    Emitter-base breakdown voltage                         VEBO             IE= 10A, IC=0                   5                                         V
    Collector cut-off current                               ICBO            VCB= 25 V , IE=0                                                 0.1     A

    Emitter cut-off current                                 IEBO            VEB= 4V, IC=0                                                    0.1     A

                                                           hFE(1)           VCE= 1V, IC= 100mA            100                                630
    DC current gain
                                                           hFE(2)           VCE= 1V, IC= 300mA             60
    Collector-emitter saturation voltage                  VCE(sat)          IC= 500mA, IB= 50mA                                              0.7      V
    Base-emitter saturation voltage                       VBE(sat)          IC= 500mA, IB= 50mA                                              1.2      V
    Base-emitter voltage                                    VBE             VCE=1V, IC= 500mA                                                1.2      V
    Collecter capactiance                                   Cob             VCB=10V ,f=1MHz                          6                               pF
                                                                            VCE= 5 V,      IC= 50mA                  170
    Transition frequency                                     fT                                                                                      MHz
                                                                            f=100MHz


    CLASSIFICATION OF              hFE (1)
    Rank                                     BC818-16                                     BC818-25                    BC818-40

    Range                                       100-250                                   160-400                        250-630

    Marking                                         6E                                       6F                                         6G


1




JinYu                                                www.htsemi.com
semiconductor

                                                                                                                         Date:2011/05
                                                        BC881
    Typical Characteristics




2




JinYu                     www.htsemi.com
semiconductor

                                           Date:201/5



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