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bf620


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                                                                                                                              BF620


TRANSISTOR (NPN)
                                                                                   SOT-89
FEATURES
     Low current (max. 50mA)                                                       1. BASE
     High voltage (max. 300V).
     Video output stages.                                                          2. COLLECTOR        1
                                                                                                           2
                                                                                   3. EMITTER
                                                                                                               3

     MarkingDC

     MAXIMUM RATINGS (TA=25 unless otherwise noted)

     Symbol            Parameter               Value      Units
     VCBO     Collector-Base Voltage            300        V
     VCEO     Collector-Emitter Voltage         300        V
     VEBO     Emitter-Base Voltage               5         V
     IC       Collector Current -Continuous     50         mA
     PC       Collector Power Dissipation       500       mW
     TJ       Junction Temperature              150        
     Tstg     Storage Temperature             -55-150      

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                       Symbol              Test    conditions            MIN        TYP                MAX   UNIT

 Collector-base breakdown voltage             V(BR)CBO   IC=100A, IE=0                          300                                  V

 Collector-emitter breakdown voltage          V(BR)CEO   IC=1mA, IB=0                           300                                  V

 Emitter-base breakdown voltage               V(BR)EBO   IE=100A, IC=0                            5                                  V

 Collector cut-off current                      ICBO     VCB=200V, IE=0                                                       10    nA

 Emitter cut-off current                        IEBO     VEB=5V, IC=0                                                         50    nA

 DC current gain                                hFE      VCE=20V, IC=25mA                         50

 Collector-emitter saturation voltage         VCE(sat)   IC=30mA, IB=5mA                                                      0.6    V

 Transition frequency                            fT      VCE=10V, IC=10mA, f=100MHz               60                                MHz




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JinYu                                         www.htsemi.com
semiconductor

                                                                                                               Date:2011/05
                                                              BF620


    Typical Characteristics




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JinYu                         www.htsemi.com
semiconductor

                                               Date:2011/05



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