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                                                                                            BF8 20/ BF8 22


    TRANSISTOR (NPN)

                                                                                          SOT-23
    FEATURES
         Low current (max.50 mA)
                                                                                          1. BASE
         High voltage (max.300V)                                                          2. EMITTER
         Telephony and professional communication equipment.                              3. COLLECTOR




    MARKING: BF820:1V, BF822: 1X

    MAXIMUM RATINGS (TA=25 unless otherwise noted)

      Symbol                                        Parameter                                   Value                           Units
                        Collector-Base Voltage                               BF820              300
      VCBO                                                                                                                          V
                                                                             BF822              250
                        Collector-Emitter Voltage                           BF820               300
      VCEO                                                                                                                          V
                                                                            BF822               250
      VEBO              Emitter-Base Voltage                                                     5                                  V

      IC                Collector Current -Continuous                                            50                                 mA

      PC                Collector Power Dissipation                                             0.25                                W

      Tj                Junction Temperature                                                    150                                 

      Tstg              Storage Temperature                                                 -55-150                                 

      ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                               Symbol       Test   conditions                  MIN                  MAX         UNIT
                                                                   IC=100A, IE=0          BF820         300
      Collector-base breakdown voltage                  V(BR)CBO                                                                           V
                                                                                           BF822        250
                                                                   IC=1mA, IB=0           BF820         300
      Collector-emitter breakdown voltage               V(BR)CEO                                                                           V
                                                                                           BF822        250
      Emitter-base breakdown voltage                    V(BR)EBO   IE= 100A, IC=0                        5                                 V

      Collector cut-off current                           ICBO     VCB=200V,IE=0                                             0.01         A

      Emitter cut-off current                             IEBO     VEB= 5V,IC=0                                              0.05         A

      DC current gain                                     hFE      VCE= 20V,IC=25mA                      50

      Collector-emitter saturation voltage              VCE(sat)   IC=30mA,IB= 5mA                                           0.6           V

      Transition frequency                                 fT      VCE=10V, IC= 10mA,f=100MHz            60                              MHz

      Collector output capacitance                        Cob      VCB=30V,IE=0,f=1MHz                                       1.6          pF



1




JinYu                                            www.htsemi.com
semiconductor

                                                                                                              Date:2011/05
                                               BF8 20/ BF8 22
    Typical Characteristics




2




JinYu                         www.htsemi.com
semiconductor

                                                      Date:2011/05

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