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                                                                                                                                    C1815


TRANSISTOR (NPN)
                                                                                                    SOT-23

FEATURES
   Power dissipation

                                                                                                    1. BASE
MARKING : C1815=HF
                                                                                                    2. EMITTER
                                                                                                    3. COLLECTOR


MAXIMUM RATINGS (TA=25 unless otherwise noted)

       Symbol                                      Parameter                              Value                                 Units
VCBO                   Collector-Base Voltage                                                  60                                    V
VCEO                   Collector-Emitter Voltage                                               50                                    V
VEBO                   Emitter-Base Voltage                                                    5                                     V
IC                     Collector Current -Continuous                                       150                                      mA
PC                     Collector Power Dissipation                                         200                                      mW
Tj                     Junction Temperature                                                150                                       
Tstg                   Storage Temperature                                                -55-150                                     

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                Parameter                              Symbol       Test    conditions   MIN              TYP                  MAX       UNIT

     Collector-base breakdown voltage                  V(BR)CBO   IC= 100uA, IE=0         60                                              V

     Collector-emitter breakdown voltage               V(BR)CEO   IC= 0.1mA, IB=0         50                                              V

     Collector cut-off current                           ICBO     VCB=60V, IE=0                                                0.1        uA

     Collector cut-off current                           ICEO     VCE=50V, IB=0                                                0.1        uA

     Emitter cut-off current                             IEBO     VEB= 5V, IC=0                                                0.1        uA

     DC current gain                                     hFE      VCE= 6V, IC= 2mA       130                                   400

     Collector-emitter saturation voltage              VCE(sat)   IC=100mA, IB= 10mA                                           0.25       V

     Base-emitter saturation voltage                   VBE(sat)   IC=100mA, IB= 10mA                                            1         V

                                                                  VCE=10V, IC= 1mA,
     Transition frequency                                 fT                              80                                             MHz
                                                                  f=30MHz


     CLASSIFICATION            OF   hFE
     Rank                                            L                                                H
     Range                                         130-200                                         200-400




1




JinYu                                              www.htsemi.com
semiconductor

                                                                                                                Date:2011/05
                                                                               C1815

        Typical Characteristics




                VCE(sat)/VBE(sat)-IC                    fT-Ic




2




JinYu                                  www.htsemi.com
semiconductor

                                                                Date:2011/05

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