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                                                                                                                                   CXT5401


    TRANSISTOR (PNP)


                                                                                            SOT-89
    FEATURE
        Switching and amplification in high voltage
        Applications such as telephony                                                      1. BASE
        Low current(max. 500mA)                                                                             1                        1
        High voltage(max.160v)                                                              2. COLLECTOR        2
                                                                                                                2
                                                                                                                         3
                                                                                            3. EMITTER
    MAXIMUM RATINGS (TA=25 unless otherwise noted)

     Symbol                 Parameter                     Value        Units
     VCBO        Collector-Base Voltage                    -160          V
     VCEO        Collector-Emitter Voltage                 -150          V
     VEBO        Emitter-Base Voltage                       -5           V
     IC          Collector Current -Continuous             -0.5          A
     PC          Collector Power Dissipation                0.5          W
     TJ          Junction Temperature                      150           
     Tstg        Storage Temperature                    -55-150          

    ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)

                    Parameter                    Symbol                Test    conditions         MIN       TYP                    MAX    UNIT
     Collector-base breakdown voltage            V(BR)CBO         IC= -100A, IE=0                 -160                                     V
     Collector-emitter breakdown voltage         V(BR)CEO         IC = -1mA, IB=0                 -150                                     V
     Emitter-base breakdown voltage              V(BR)EBO         IE = -10A, IC=0                     -5                                   V
     Collector cut-off current                     ICBO           VCB = -120 V, IE=0                                               -50    nA
     Emitter cut-off current                       IEBO           VEB= -3V, IC=0                                                   -50    nA
                                                  hFE(1)          VCE= -5V, IC=-1 mA              50
     DC current gain                              hFE(2)          VCE= -5V, IC= -10 mA            60                               300
                                                  hFE(3)          VCE= -5V, IC=-50 mA             50
                                                 VCE(sat)         IC= -10 mA, IB= -1 mA                                            -0.2    V
     Collector-emitter saturation voltage
                                                 VCE(sat)         IC= -50 mA, IB= -5 mA                                            -0.5    V
                                                 VBE(sat)         IC= -10 mA, IB= -1 mA                                            -1      V
     Base-emitter saturation voltage
                                                 VBE(sat)         IC= -50 mA, IB= -5 mA                                            -1      V
                                                                  VCE= -10V, IC= -10mA,
     Transition frequency                          fT                                                 100                          300    MHz
                                                                  f = 100MHz
     Output Capacitance                            Cob            VCB=-10V, IE= 0,f=1MHz                                            6      pF
                                                                  VCE= -5.0V, IC= -200A,
     Noise Figure                                  NF             RS= 10,f =10Hz to15.7kHz                                          8     dB




1




JinYu                                          www.htsemi.com
semiconductor

                                                                                                                    Date:2011/05
                                                          CXT5401

Typical Characteristics




 2




JinYu                     www.htsemi.com
semiconductor

                                           Date:2011/05

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