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emd6


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                                                                                                                        EMD6
DIGITAL TRANSISTOR (NPN+ PNP)


FEATURES                                                                                        SOT-563
   DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package.                                       1
   Transistor elements are independent, eliminating interference.
   Mounting cost and area can be cut in half.
External circuit




MARKING:D6

Absolute maximum ratings(Ta=25)

          Parameter               Symbol               Limits        Unit

 Collector-base    voltage        V(BR)CBO              50            V
 Collector-emitter voltage        V(BR)CEO              50            V
 Emitter-base     voltage         V(BR)EBO               5            V
 Collector current                     IC               100          mA

 Collector Power dissipation           PC               150          mW

 Junction temperature                  Tj               150           
 Storage temperature               Tstg              -55~150          

Electrical characteristics (Ta=25)

             Parameter                      Symbol            Min.     Typ      Max.    Unit               Conditions
Collector-base breakdown voltage            V(BR)CBO          50                          V                 IC=50A
Collector-emitter breakdown voltage         V(BR)CEO          50                          V                    IC=1mA
Emitter-base breakdown voltage              V(BR)EBO            5                         V                 IE=50A
Collector cut-off current                     ICBO                               0.5     A                  VCB=50V
Emitter cut-off current                       IEBO                               0.5     A                     VEB=4V
Collector-emitter saturation voltage        VCE(sat)                             0.3      V            IC=5mA,IB=0.25mA
DC current transfer ratio                     hFE             100                600                     VCE=5V,IC=1mA
Input resistance                              R1              3.29        4.7    6.11   K
Transition frequency                           fT                      250              MHz    VCE=10V ,IE=-5mA,f=100MHz




1
JinYu                                           www.htsemi.com
semiconductor

                                                                                                                 Date:2011/ 05



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