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emf5


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                                                                                                                            EMF5
General purpose transistors (dual transistors)

FEATURES
   2SA2018 and DTC144E are housed independently in a package.                                             SOT-563
   Mounting possible with SOT-563 automatic mounting machines.
   Transistor elements are independent, eliminating interference.
   Mounting cost and area be cut in half.
                                                                                                                  1
Marking: F5
                                                                (3)                    (2)   (1)




Equivalent circuit                                          DTr2                               Tr1
                                                                            R1

                                                                      R2

                                                                (4)              (5)         (6)




Tr1 Absolute maximum ratings (Ta=25)

     Symbol                Parameter             Value          Units
    VCBO        Collector-Base Voltage                -15             V
    VCEO        Collector-Emitter Voltage             -12             V
    VEBO        Emitter-Base Voltage                  -6              V
    IC          Collector Current                 -500             mA
    PC          Collector Power Dissipation       150              mW
    TJ          Junction Temperature              150                 
    Tstg        Storage Temperature             -55-150               

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

              Parameter                       Symbol                       Test              conditions      Min      Typ       Max         Unit

 Collector-base breakdown voltage             V(BR)CBO      IC=-10A, IE=0                                    -15                            V

 Collector-emitter breakdown voltage          V(BR)CEO      IC=-1mA, IB=0                                    -12                            V

 Emitter-base breakdown voltage               V(BR)EBO      IE=-10A, IC=0                                    -6                             V

 Collector cut-off current                      ICBO        VCB=-15V, IE=0                                                     -0.1         A

 Emitter cut-off current                        IEBO        VEB=-6V, IC=0                                                      -0.1         A

 DC current gain                                hFE         VCE=-2V, IC=-10mA                                270               680

 Collector-emitter saturation voltage         VCE(sat)      IC=-200mA, IB=-10mA                                               -0.25         V

 Transition frequency                            fT         VCE=-2V, IE=-10mA, f=100MHz                               260               MHz

 Collector output capacitance                   Cob         VCB=-10V, IE=0, f=1MHz                                    6.5                   pF




1
JinYu                                         www.htsemi.com
semiconductor

                                                                                                                            Date:2011/ 05
                                                                                            EMF5

Tr2 Absolute maximum ratings(Ta=25)

          Parameter      Symbol                               Limits                                   Unit
Supply voltage               VCC                                50                                         V
Input voltage                   VIN                           -10~+40                                      V
                                IO                              30
Output current                                                                                             mA
                           IC(MAX)                             100
Power dissipation               Pd                             150                                     mW
Junction temperature            Tj                             150                                         

Storage temperature         Tstg                              -55~150                                      


Electrical characteristics (Ta=25)

         Parameter     Symbol         Min.    Typ      Max.          Unit              Conditions
                         VI(off)                       0.5                          VCC=5V, IO=100A
Input voltage                                                           V
                         VI(on)       3.0                                           VO=0.3V, IO=2mA
Output voltage          VO(on)                 0.1     0.3              V           IO/II=10mA/0.5mA
Input current              II                          0.18            mA                VI=5V
Output current           IO(off)                       0.5             A              VCC=50V, VI=0
DC current gain           GI          68                                             VO=5V, IO=5mA
Input resistance          R1          32.9     47      61.1            K                    -
Resistance ratio        R2/R1         0.8      1       1.2                                  -
Transition frequency       fT                 250                    MHz    VCE=10V, IE=-5mA, f=100MHz




 2
 JinYu                                www.htsemi.com
 semiconductor

                                                                                           Date:2011/ 05



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