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                                                                                                       EMF23
Power management (dual transistors)

FEATURES
                                                                                     SOT-563
     2SA1774 and DTC114E are housed independently in a package
     Power management circuit
     Power switching circuit in a single package
     Mounting cost and area can be cut in half
                                                                                          1


MARKING: F23


TR1 MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol                 Parameter              Value        Units
    VCBO   Collector-Base Voltage              -60           V
    VCEO   Collector-Emitter Voltage           -50           V
    VEBO   Emitter-Base Voltage                    -6        V
     IC    Collector Current -Continuous      -150          mA
    PC     Collector Power Dissipation         150          mW
     TJ    Junction Temperature                150           
    Tstg   Storage Temperature               -55-150         

TR1 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

           Parameter                       Symbol         Test     conditions       Min       T yp        Max        Unit

Collector-base breakdown voltage           V(BR)CBO     IC=-50A,IE=0                -60                               V

Collector-emitter breakdown voltage        V(BR)CEO     IC=-1mA,IB=0                -50                               V

Emitter-base breakdown voltage             V(BR)EBO     IE=-50A,IC=0                -6                                V

Collector cut-off current                    ICBO       VCB=-60V,IE=0                                    -0.1        A

Emitter cut-off current                      IEBO       VEB=-6V,IC=0                                     -0.1        A

DC current gain                              hFE        VCE=-6V,IC=-1mA             180                  390

Collector-emitter saturation voltage       VCE(sat)     IC=-50mA,IB=-5mA                                 -0.5         V

Transition frequency                          fT        VCE=-12V,IC=-2mA,f=100MHz             140                    MHz

Collector output capacitance                 Cob        VCB=-12V,IE=0,f=1MHz                               5         pF




1
JinYu                                      www.htsemi.com
semiconductor

                                                                                                     Date:2011/ 05
                                                                                                 EMF23

DTr2 Maximum ratings (Ta=25 )
       Parameter           Symbol                                  Limits                                  Unit

     Supply voltage          VCC                                     50                                     V

      Input voltage           VIN                                  -10~40                                   V

                              IO                                     50
     Output current                                                                                        mA
                            IC(MAX)                                 100

    Power dissipation         PC                                    150                                    mW

Junction temperature          Tj                                    150                                    

Storage temperature          Tstg                                  -55~150                                 


DTr2 Electrical characteristics (Ta=25  )
        Parameter           Symbol          Min.    Typ      Max.            Unit         Conditions
                              VI(off)                        0.5                        VCC=5V ,IO=100A
       Input voltage                                                          V
                              VI(on)         3                                         VO=0.3V ,IO=10 mA

      Output voltage          VO(on)                         0.3              V         IO/II=10mA/0.5mA

       Input current            II                           0.88            mA              VI=5V

      Output current          IO(off)                        0.5             A           VCC=50V, VI=0

      DC current gain          GI            30                                          VO=5V ,IO=5mA

      Input resistance         R1            7       10       13             K

      Resistance ratio       R2/R1          0.8      1       1.2

    Transition frequency        fT                  250                      MHz    VO=10V ,IO=-5mA,f=100MHz




2
JinYu                                       www.htsemi.com
semiconductor

                                                                                               Date:2011/ 05

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