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emf24


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                                                                                                EMF24
Power management (dual transistors)


FEATURES
                                                                                   SOT-563
     2SC4617 and DTC114E are housed independently in a package.
     Power management circuit
     Power switching circuit in a single package
     Mounting cost and area can be cut in half
                                                                                         1




MARKING: F24


TR1 MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol                 Parameter              Value        Units
    VCBO   Collector-Base Voltage                  60        V
    VCEO   Collector-Emitter Voltage               50        V
    VEBO   Emitter-Base Voltage                    7         V
     IC    Collector Current -Continuous       150          mA
    PC     Collector Power Dissipation         150          mW
     TJ    Junction Temperature                150           
    Tstg   Storage Temperature               -55-150         

TR1 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

           Parameter                       Symbol         Test     conditions     M in   T yp       Max        Unit

Collector-base breakdown voltage           V(BR)CBO     IC=50A,IE=0               60                            V

Collector-emitter breakdown voltage        V(BR)CEO     IC=1mA,IB=0               50                            V

Emitter-base breakdown voltage             V(BR)EBO     IE=50A,IC=0                7                            V

Collector cut-off current                    ICBO       VCB=60V,IE=0                                0.1        A

Emitter cut-off current                      IEBO       VEB=7V,IC=0                                 0.1        A

DC current gain                              hFE        VCE=6V,IC=1mA             180              390

Collector-emitter saturation voltage       VCE(sat)     IC=50mA,IB=5mA                             0.4          V

Transition frequency                          fT        VCE=12V,IC=2mA,f=100MHz          180                   MHz

Collector output capacitance                 Cob        VCB=12V,IE=0,f=1MHz                        3.5         pF




1
JinYu                                      www.htsemi.com
semiconductor

                                                                                               Date:2011/ 05
                                                                                                EMF24

DTr2 Maximum ratings (Ta=25 )
       Parameter           Symbol                                  Limits                                  Unit

     Supply voltage          VCC                                     50                                     V

      Input voltage           VIN                                  -10~40                                   V

                              IO                                     50
     Output current                                                                                        mA
                            IC(MAX)                                 100

    Power dissipation         PC                                    150                                    mW

Junction temperature          Tj                                    150                                    

Storage temperature          Tstg                                  -55~150                                  


DTr2 Electrical characteristics (Ta=25  )
        Parameter           Symbol          Min.    Typ      Max.            Unit        Conditions
                              VI(off)                        0.5                       VCC=5V ,IO=100A
       Input voltage                                                          V
                              VI(on)         3                                         VO=0.3V ,IO=10 mA

      Output voltage          VO(on)                         0.3              V         IO/II=10mA/0.5mA

       Input current            II                           0.88            mA              VI =5V

      Output current          IO(off)                        0.5             A           VCC=50V, VI=0

      DC current gain          GI            30                                          VO=5V ,IO=5mA

      Input resistance         R1            7       10       13             K

      Resistance ratio       R2/R1          0.8      1       1.2

    Transition frequency        fT                  250                      MHz    VO=10V ,IO=5mA,f=100MHz




2
JinYu                                       www.htsemi.com
semiconductor

                                                                                               Date:2011/ 05



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