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emt1


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                                                                                                                           EMT1
General purpose transistors (dual digital transistors)



                                                                                                     SOT-563
 FEATURES
    Two 2SA1037AK chips in a package
    Mounting possible with SOT-563 automatic mounting machines
    Transistor elements are independent,eliminating interference                                             1


 Marking: T1
                                        (3)   (2)    (1)

 Equivalent circuit
                                                    Tr1
                                  Tr2


                                        (4)   (5)    (6)




    Absolute maximum ratings (Ta=25)

            Symbol                                              Parameter                             Value                      Units
             VCBO               Collector-Base Voltage                                                 -60                        V
             VCEO               Collector-Emitter Voltage                                              -50                        V
             VEBO               Emitter-Base Voltage                                                   -6                         V
               IC               Collector Current                                                     -150                       mA
              PC                Collector Power Dissipation                                            150                       mW
              TJ                Junction Temperature                                                   150                        
              Tstg              Storage Temperature                                                  -55-150                      

 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

              Parameter                                     Symbol            Test      conditions     Min       Typ      Max          Unit

    Collector-base breakdown voltage                        V(BR)CBO   IC=-50A, IE=0                   -60                               V

    Collector-emitter breakdown voltage                     V(BR)CEO   IC=-1mA, IB=0                   -50                               V

    Emitter-base breakdown voltage                          V(BR)EBO   IE=-50A, IC=0                   -6                                V

    Collector cut-off current                                 ICBO     VCB=-60V, IE=0                                     -0.1           A

    Emitter cut-off current                                   IEBO     VEB=-7V, IC=0                                      -0.1           A

    DC current gain                                           hFE      VCE=-6V, IC=-1mA                120                560

    Collector-emitter saturation voltage                    VCE(sat)   IC=-50mA, IB=-5mA                                  -0.5           V

    Transition frequency                                       fT      VCE=-12V, IC=-2mA, f=100MHz               140                   MHz

    Output capacitance                                        Cob      VCB=-12V, IE=0, f=1MHz                               5            pF


1
JinYu                                                      www.htsemi.com
semiconductor

                                                                                                                       Date:2011/ 05



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