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                                                                                                                             FMMT491


    TRANSISTOR (NPN)
                                                                                                   SOT-23

    FEATURES
           Low equivalent on-resistance

                                                                                                   1. BASE
                                                                                                   2. EMITTER
                                                                                                   3. COLLECTOR
    Marking :491

    MAXIMUM RATINGS(TA=25 unless otherwise noted)

        Symbol                    Parameter                          Value        Units
    VCBO           Collector-Base Voltage                             80           V
    VCEO           Collector-Emitter Voltage                          60           V
    VEBO           Emitter-Base Voltage                               5            V
    IC             Collector Current -Continuous                      1            A
    PC             Collector Power Dissipation                       250          mW
    Tj             Junction Temperature                              150           
    Tstg           Storage Temperature                           -55-150           

    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                   Parameter                       Symbol                  Test    conditions        MIN        TYP           MAX    UNIT

        Collector-base breakdown voltage           V(BR)CBO            IC=100A,IE=0                   80                              V

        Collector-emitter breakdown voltage        V(BR)CEO1           IC=10mA,IB=0                   60                              V

        Emitter-base breakdown voltage             V(BR)EBO            IE=100A,IC=0                    5                              V

        Collector cut-off current                     ICBO             VCB=60V,IE=0                                            0.1   A

        Emitter cut-off current                       IEBO             VEB=4V,IC=0                                             0.1   A

                                                     hFE(1)            VCE=5V,IC=1mA                  100
                                                             1
                                                    hFE(2)             VCE=5V,IC=500mA                100                      300
        DC current gain
                                                             1
                                                    hFE(3)             VCE=5V,IC=1A                   80

                                                    hFE(4) 1           VCE=5V,IC=2A                   30
                                                                 1
                                                   VCE(sat)1           IC=500mA,IB=50mA                                       0.25    V
        Collector-emitter saturation voltage
                                                   VCE(sat)2 1         IC=1A,IB=100mA                                          0.5    V

        Base-emitter saturation voltage            VBE(sat) 1          IC=1A,IB=100mA                                          1.1    V

        Base-emitter voltage                         VBE1              VCE=5V,IC=1A                                             1     V

        Transition frequency                           fT              VCE=10V,IC=50mA,,f=100MHz      150                            MHz

        Collector output capacitance                  Cob              VCB=10V,f=1MHz                                          10    pF
    1
        Measured under pulsed conditions, Pulse width=300s, Duty cycle2%.


1




JinYu                                              www.htsemi.com
semiconductor

                                                                                                                Date:201/5
                                                            FMMT491

    Typical Characteristics




2




JinYu                         www.htsemi.com
semiconductor

                                               Date:201/5

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