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                                                                                                                               FMMT591

    TRANSISTOR (PNP)
                                                                                                     SOT-23
    FEATURES
           Low equivalent on-resistance


                                                                                                     1. BASE
                                                                                                     2. EMITTER
    Marking :591                                                                                     3. COLLECTOR


    MAXIMUM RATINGS (TA=25 unless otherwise noted)

        Symbol                    Parameter                         Value      Units
    VCBO           Collector-Base Voltage                             -80        V
    VCEO           Collector-Emitter Voltage                          -60        V
    VEBO           Emitter-Base Voltage                               -5         V
    IC             Collector Current -Continuous                      -1         A
    PC             Collector Power Dissipation                       500       mW
    Tj             Junction Temperature                              150        
    Tstg           Storage Temperature                              -55-150     

    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                   Parameter                       Symbol                     Test      conditions   MIN       TYP              MAX    UNIT

        Collector-base breakdown voltage           V(BR)CBO            IC=-100A, IE=0                -80                                V
                                                                1
        Collector-emitter breakdown voltage        V(BR)CEO            IC=-10mA, IB=0                -60                                V

        Emitter-base breakdown voltage             V(BR)EBO            IE=-100A, IC=0                -5                                 V

        Collector cut-off current                    ICBO              VCB=-60V, IE=0                                           -0.1   A

        Emitter cut-off current                      IEBO              VEB=-4V, IC=0                                            -0.1   A

                                                     hFE(1)            VCE=-5V, IC=-1mA              100
                                                    hFE(2) 1           VCE=-5V, IC=-500mA            100                        300
        DC current gain
                                                    hFE(3) 1           VCE=-5V, IC=-1A               80
                                                    hFE(4) 1           VCE=-5V, IC=-2A               15
                                                                1
                                                   VCE(sat)1           IC=-500mA, IB=-50mA                                      -0.3    V
        Collector-emitter saturation voltage
                                                                1
                                                   VCE(sat)2           IC=-1A, IB=-100mA                                        -0.6    V
                                                                1
        Base-emitter saturation voltage            VBE(sat)            IC=-1A, IB=-100mA                                        -1.2    V
                                                            1
        Base-emitter voltage                         VBE               VCE=-5V, IC=-1A                                           -1     V

        Transition frequency                           fT              VCE=-10V,IC=-50mA,,f=100MHz   150                               MHz

        Collector output capacitance                  Cob              VCB=-10V,f=1MHz                                           10    pF
    1
        Measured under pulsed conditions, Pulse width=300s, Duty cycle2%.


1




JinYu                                              www.htsemi.com
semiconductor

                                                                                                                  Date:201/5
                                                                FMMT591

    Typical     characteristics




2




JinYu                             www.htsemi.com
semiconductor

                                                   Date:201/5

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