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ksa1182


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                                                                                                              KSA1182

TRANSISTOR (PNP)                                                                           SOT-23

FEATURES
Complement to KSC2859
                                                                                           1. BASE

MAXIMUM RATINGS (TA=25 unless otherwise noted)                                             2. EMITTER

                                                                                           3. COLLECTOR
 Symbol                    Parameter                    Value         Units
VCBO        Collector-Base Voltage                       -35           V
VCEO        Collector-Emitter Voltage                    -30           V
VEBO        Emitter-Base Voltage                         -5            V
IC          Collector Current -Continuous               -0.5           A
PC          Collector Power Dissipation                 150           mW
Tj          Junction Temperature                        150            
Tstg        Storage Temperature                       -55-150          

ELECTRICAL CHARACTERISTICS (Tamb=25                               unless      otherwise   specified)

           Parameter                        Symbol             Test    conditions               MIN         TYP                 MAX     UNIT

 Collector-base breakdown voltage           V(BR)CBO      IC=-100A, IE=0                        -35                                      V

 Collector-emitter breakdown voltage        V(BR)CEO      IC=-1mA, IB=0                         -30                                      V

 Emitter-base breakdown voltage             V(BR)EBO      IE=-100A, IC=0                         -5                                      V

 Collector cut-off current                    ICBO        VCB=-35V, IE=0                                                        -0.1    A

 Emitter cut-off current                      IEBO        VEB=-5V, IC=0                                                         -0.1    A

                                             hFE(1)       VCE=-1V, IC=-100mA                    70                              240
 DC current gain
                                             hFE(2)       VCE=-6V, IC=-400mA                    25

 Collector-emitter saturation voltage       VCE(sat)      IC=-100mA, IB=-10mA                                                   -0.25    V

 Base-emitter voltage                         VBE         VCE=-1V, IC=-100mA                                                    -1.0     V

 Transition frequency                          fT         VCE=-6V, IC=-20mA                                 200                         MHz

 Collector output capacitance                 Cob         VCB=-6V, IE=0, f=1MHz                             13                          pF




 CLASSIFICATION OF            hFE(1)
 Rank                                               O                                                   Y

 Range                                        70-140                                                  120-240

 Marking                                        F1O                                                     F1Y



     1




 JinYu                                      www.htsemi.com
 semiconductor

                                                                                                                 Date:2011/05
                                                          KSA1182
Typical Characteristics




2




JinYu                     www.htsemi.com
semiconductor

                                           Date:2011/05



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