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                                                                                                                                 KTA1668

    TRANSISTOR (PNP)
                                                                                   SOT-89

    FEATURES                                                                       1. BASE
         High voltage: VCEO=-60V
         High transistors frequency                                                2. COLLECTOR       1
                                                                                                           2
                                                                                   3. EMITTER
    MAXIMUM RATINGS (TA=25 unless otherwise noted)                                                                           3
      Symbol            Parameter              Value        Units
      VCBO      Collector-Base Voltage          -80           V
      VCEO      Collector-Emitter Voltage       -60           V
      VEBO      Emitter-Base Voltage             -5           V
      IC        Collector Current                -1           A
      PC        Collector power dissipation     500          mW
      TJ        Junction Temperature            150           
      Tstg      Storage Temperature           -55-150         


    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
               Parameter                       Symbol         Test   conditions                 MIN           TYP                 MAX    UNIT

     Collector-base breakdown voltage          V(BR)CBO     IC=-0.1mA,IE=0                      -80                                       V

     Collector-emitter breakdown voltage       V(BR)CEO     IC=-1mA,IB=0                        -60                                       V

     Emitter-base breakdown voltage            V(BR)EBO     IE=-0.1mA,IC=0                      -5                                        V

     Collector cut-off current                   ICBO       VCB=-50V,IE=0                                                         -0.1   A

     Emitter cut-off current                      IEBO      VEB=-4V,IC=0                                                          -0.1   A

                                                 hFE1       VCE=-2V,IC=-50mA                    60                                200
     DC current gain
                                                 hFE2       VCE=-2V,IC=-1A                      30

     Collector-emitter saturation voltage       VCE(sat)    IC=-500mA,IB=-50mA                                                    -0.7    V

     Base-emitter saturation voltage            VB E(sat)   IC=-500mA,IB=-50mA                                                    -1.2    V

     Transition frequency                          fT       VCE=-10V,IC=-50mA, f=100MHz                         150                      MHz

     Collector output capacitance                 Cob       VCB=-10V,IE=0,f=1MHz                                     12                  pF


     CLASSIFICATION OF           hFE
     Rank                                               O                                                 Y

     Range                                        60-120                                          100-200

     Marking                                          JO                                                  JY




1




JinYu                                         www.htsemi.com
semiconductor

                                                                                                              Date:2011/05
                                                          KTA1668


Typical Characteristics




2




JinYu                     www.htsemi.com
semiconductor

                                           Date:2011/05
                                                KTA1668




3




JinYu           www.htsemi.com
semiconductor

                                 Date:2011/05

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