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TRANSISTOR (PNP)
SOT-89
FEATURES 1. BASE
High voltage: VCEO=-60V
High transistors frequency 2. COLLECTOR 1
2
3. EMITTER
MAXIMUM RATINGS (TA=25 unless otherwise noted) 3
Symbol Parameter Value Units
VCBO Collector-Base Voltage -80 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -1 A
PC Collector power dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-0.1mA,IE=0 -80 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-0.1mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 A
hFE1 VCE=-2V,IC=-50mA 60 200
DC current gain
hFE2 VCE=-2V,IC=-1A 30
Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -0.7 V
Base-emitter saturation voltage VB E(sat) IC=-500mA,IB=-50mA -1.2 V
Transition frequency fT VCE=-10V,IC=-50mA, f=100MHz 150 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 12 pF
CLASSIFICATION OF hFE
Rank O Y
Range 60-120 100-200
Marking JO JY
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
KTA1668
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
KTA1668
3
JinYu www.htsemi.com
semiconductor
Date:2011/05
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