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                                                                                                                                KTA1663


TRANSISTOR (PNP)

                                                                                     SOT-89
FEATURES
   High current applications                                                         1. BASE
   Complementary to KTC4375
                                                                                     2. COLLECTOR        1
                                                                                                             2
                                                                                     3. EMITTER                         3
MAXIMUM RATINGS (TA=25 unless otherwise noted)

     Symbol              Parameter                Value      Units
     VCBO      Collector-Base Voltage                -30       V
     VCEO      Collector-Emitter Voltage             -30       V
     VEBO      Emitter-Base Voltage                  -5        V
     IC        Collector Current -Continuous         -1.5      A
     PC        Collector Power Dissipation           500      mW
     TJ        Junction Temperature                  150       
     Tstg      Storage Temperature               -55-150       




ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                          Symbol         Test    conditions         MIN          TYP                     MAX    UNIT

    Collector-base breakdown voltage             V(BR)CBO   IC=-1mA, IE=0                      -30                                      V
    Collector-emitter breakdown voltage          V(BR)CEO   IC=-10mA, IB=0                     -30                                      V
    Emitter-base breakdown voltage               V(BR)EBO   IE=-1mA, IC=0                      -5                                       V
    Collector cut-off current                      ICBO     VCB=-30V, IE=0                                                      -0.1   A
    Emitter cut-off current                        IEBO     VEB=-5V, IC=0                                                       -0.1   A
    DC current gain                                hFE      VCE=-2V, IC=-0.5A              100                                  320
    Collector-emitter saturation voltage         VCE(sat)   IC=-1.5A, IB=-30mA                                                  -2      V
    Base-emitter voltage                           VBE      VCE=-2V, IC=-0.5A                                                   -1      V
    Transition frequency                             fT     VCE=-2V, IC=-500mA                             120                         MHz
    Collector output capacitance                   Cob      VCB=-10V, IE=0,f=1MHz                                               50     MHz


CLASSIFICATION OF hFE
     Rank                                        O                                                     Y
     Range                                     100-200                                               160-320




1




JinYu                                           www.htsemi.com
semiconductor

                                                                                                                 Date:2011/05
                                                          KTA1663

Typical Characteristics




2




JinYu                     www.htsemi.com
semiconductor

                                           Date:2011/05

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