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                                                                                                                                KTC4375

    TRANSISTOR (NPN)
                                                                                     SOT-89

    FEATURES                                                                         1. BASE
    Low voltage
                                                                                     2. COLLECTOR        1
                                                                                                             2
    MAXIMUM RATINGS (TA=25 unless otherwise noted)                                   3. EMITTER
                                                                                                                                3
    Symbol                Parameter                    Value            Units
    VCBO      Collector-Base Voltage                    30               V

    VCEO      Collector-Emitter Voltage                 30               V
    VEBO      Emitter-Base Voltage                         5             V
    IC        Collector Current -Continuous             1.5              A
    PC        Collector Power Dissipation               0.5              W
    TJ        Junction Temperature                      150              
    Tstg      Storage Temperature                  -55-150               



    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                       Symbol            Test   conditions                MIN            TYP                MAX   UNIT

     Collector-base breakdown voltage          V(BR)CBO        IC=1mA,IE=0                        30                                       V

     Collector-emitter breakdown voltage       V(BR)CEO        IC=10mA,IB=0                       30                                       V

     Emitter-base breakdown voltage            V(BR)EBO        IE=1mA,IC=0                          5                                      V

     Collector cut-off current                   ICBO          VCB=30V,IE=0                                                         0.1   A

     Emitter cut-off current                     IEBO          VEB=5V,IC=0                                                          0.1   A

     DC current gain                             hFE           VCE=2V,IC=0.5A                     100                               320

     Collector-emitter saturation voltage      VCE(sat)        IC=1.5A,IB=30mA                                                       2     V

     Base-emitter voltage                        VBE           VCE=2V,IC=0.5A                                                        1     V

     Transition frequency                         fT           VCE=2V,IC=500mA                                   120                      MHz

     Collector output capacitance                Cob           VCB=10V,IE=0,f=1MHz                                                  40     pF



    CLASSIFICATION OF            hFE(1)
     Rank                                              O                                                     Y

     Range                                      100-200                                                 160-320

     Marking                                       GO                                                     GY

1




JinYu                                         www.htsemi.com
semiconductor

                                                                                                                 Date:2011/05
                                                          KTC4375
Typical Characteristics




2




JinYu                     www.htsemi.com
semiconductor

                                           Date:2011/05

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