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                                                                                                                                    KTC4378

TRANSISTOR (NPN)                                                                     SOT-89

                                                                                     1. BASE
    FEATURES
    High voltage
                                                                                     2. COLLECTOR        1
                                                                                                             2
    MAXIMUM RATINGS (TA=25 unless otherwise noted)                                   3. EMITTER
                                                                                                                                3
    Symbol                Parameter                    Value            Units
    VCBO      Collector-Base Voltage                     80              V

    VCEO      Collector-Emitter Voltage                  60              V
    VEBO      Emitter-Base Voltage                         5             V
    IC        Collector Current -Continuous                1             A
    PC        Collector Dissipation                      0.5             W
    TJ        Junction Temperature                       150             
    Tstg      Storage Temperature                  -55-150               

    ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                       Symbol            Test   conditions                MIN        TYP                     MAX    UNIT

     Collector-base breakdown voltage          V(BR)CBO        IC=1mA,IE=0                          80                                       V

     Collector-emitter breakdown voltage       V(BR)CEO        IC=10mA,IB=0                         60                                       V

     Emitter-base breakdown voltage            V(BR)EBO        IE=1mA,IC=0                          5                                        V

     Collector cut-off current                   ICBO          VCB=50V,IE=0                                                           0.1   A

     Emitter cut-off current                     IEBO          VEB=4V,IC=0                                                            0.1   A

                                                hFE(1)         VCE=2V,IC=0.05A                    100                                 320
     DC current gain
                                                hFE(2)         VCE=2V,IC=1A                         30

     Collector-emitter saturation voltage      VCE(sat)        IC=500mA,IB=50mA                                                       0.5    V

     Base-emitter saturation voltage           VBE(sat)        IC=500mA,IB=50mA                                                       1.2    V

     Transition frequency                         fT           VCE=10V,IC=50mA                               150                            MHz

     Collector output capacitance                Cob           VCB=10V,IE=0,f=1MHz                               12                          pF



     CLASSIFICATION OF           hFE(1)
     Rank                                              Y                                                  GR

     Range                                      100-200                                                 160-320

     Marking                                       TY                                                    TGR


1




JinYu                                         www.htsemi.com
semiconductor

                                                                                                                 Date:2011/05
                                                          KTC4378
Typical Characteristics




2




JinYu                     www.htsemi.com
semiconductor

                                           Date:2011/05
                                                KTC4378




3




JinYu           www.htsemi.com
semiconductor

                                 Date:2011/05

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