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m8050


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                                                                                                                                      M8050

TRANSISTOR(NPN)
                                                                                                   SOT-23

FEATURES
  Power dissipation


                                                                                                   1. BASE
                                                                                                   2. EMITTER
MARKING: Y11
                                                                                                   3. COLLECTOR



MAXIMUM RATINGS (TA=25 unless otherwise noted)
           Symbol                                         Parameter                                  Value                            Units
VCBO                         Collector-Base Voltage                                                    40                              V
VCEO                         Collector-Emitter Voltage                                                 25                              V
VEBO                         Emitter-Base Voltage                                                      6                               V
IC                           Collector Current -Continuous                                             0.8                             A
PC                           Collector Power Dissipation                                              0.2                              W
Tj                           Junction Temperature                                                     150                              
Tstg                         Storage Temperature                                                    -55-150                            



ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                    Parameter                            Symbol         Test   conditions             MIN           MAX                    UNIT

         Collector-base breakdown voltage                V(BR)CBO     IC= 100A, IE=0                   40                                  V
         Collector-emitter breakdown voltage             V(BR)CEO*    IC=1mA , IB=0                    25                                  V
         Emitter-base breakdown voltage                  V(BR)EBO     IE= 100A, IC=0                    6                                  V
         Collector cut-off current                         ICBO       VCB= 35V, IE=0                                0.1                 A
         Collector cut-off    current                      ICEO       VCE= 20V, IB=0                                0.1                 A
                                                           hFE(1)     VCE=1V, IC=5mA                   45
         DC current gain                                   hFE(2)     VCE=1V, IC=100mA                 80           300
                                                          hFE3        VCE=1V, IC=800mA                 40
         Collector-emitter saturation voltage             VCE(sat)    IC= 800mA, IB=80mA                            0.5                    V
         Base-emitter saturation voltage                  VBE(sat)    IC=800mA, IB= 80mA                            1.2                    V
         Transition frequency                               fT        VCE=6V, IC= 20mA , f=30MHz       150                             MHz


 * Pulse Test : pulse width  300



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