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m8550


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                                                                                                                         M8 550


TRANSISTOR(PNP)
FEATURES                                                                              SOT-23
    Power dissipation



MARKING: Y21
                                                                                      1. BASE
                                                                                      2. EMITTER
MAXIMUM RATINGS (TA=25 unless otherwise noted)                                        3. COLLECTOR
    Symbol                   Parameter                Value      Units
VCBO               Collector-Base Voltage               -40        V
VCEO               Collector-Emitter Voltage            -25        V
VEBO               Emitter-Base Voltage                 -6         V
IC                 Collector Current -Continuous        -0.8      A
PC                 Collector power dissipation         200        mW
Tj                 Junction Temperature                150         
Tstg               Storage Temperature               -55-150       




ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                   Parameter                       Symbol        Test    conditions     MIN            MAX                UNIT
         Collector-base breakdown voltage          V(BR)CBO    IC= -100A , IE=0           -40                              V
         Collector-emitter breakdown voltage       V(BR)CEO*   IC= -1mA , IB=0            -25                              V
         Emitter-base breakdown voltage            V(BR)EBO    IE= -100A,    IC=0         -6                               V
         Collector cut-off current                   ICBO      VCB= -35V ,   IE=0                      -0.1               A
         Collector cut-off current                   ICEO      VCE= -20V ,   IB=0                      -0.1               A
                                                     hFE(1)    VCE=-1V, IC=-5mA           45
         DC current gain                             hFE(2)    VCE=-1V, IC=-100mA         85           300
                                                     hFE(3)    VCE=-1V, IC=-800mA         40
         Collector-emitter saturation voltage       VCE(sat)   IC= -800mA, IB=-80mA                    -0.5                V
         Base-emitter saturation voltage            VBE(sat)   IC=-800mA, IB=-80mA                     -1.2                V
                                                               VCE=-6V, IC= -20mA
         Transition frequency                         fT                                  150                             MHz
                                                               f=30MHz


*        Pulse Test :pulse width  300



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