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mmbt2222a


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                                                                                                              MMBT2222A


TRANSISTOR(NPN)
                                                                                             SOT-23

FEATURES
   Epitaxial planar die construction                                                         1. BASE
   Complementary PNP Type available(MMBT2907A)                                               2.EMITTER

                                                                                             3.COLLECTOR


MARKING: 1P

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol                           Parameter                               Value         Units
 VCBO            Collector-Base Voltage                                    75           V
 VCEO            Collector-Emitter Voltage                                 40           V
 VEBO            Emitter-Base Voltage                                       6           V
   IC            Collector Current -Continuous                            600           mA
  PC             Collector Dissipation                                    250          mW
 RJA             Thermal Resistance, Junction to Ambient                  500          /W
   TJ            Junction Temperature                                     150           
  Tstg           Storage Temperature                                   -55to+150        

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

                  Parameter                         Symbol              Test    conditions         Min       Typ                Max    Unit

     Collector-base breakdown voltage               V(BR)CBO          IC= 10A, IE=0                    75                               V
                                                                  *
     Collector-emitter breakdown voltage            V(BR)CEO          IC= 10mA, IB=0                   40                               V
     Emitter-base breakdown voltage                 V(BR)EBO          IE=10A, IC=0                     6                                V
     Collector cut-off current                        ICBO            VCB=60V, IE=0                                             0.01   A
     Collector cut-off current                        ICEX            VCE=30V,VBE(off)=3V                                       0.01   A
     Emitter cut-off current                          IEBO            VEB= 3V, IC=0                                             0.1    A
                                                              *
                                                     hFE(1)           VCE=10V, IC= 150mA               100                      300
     DC current gain                                 hFE(2)           VCE=10V, IC= 0.1mA               40
                                                              *
                                                     hFE(3)           VCE=10V, IC= 500mA               42
                                                                  *   IC=500 mA, IB= 50mA                                        1
     Collector-emitter saturation voltage           VCE(sat)                                                                            V
                                                                      IC=150 mA, IB=15mA                                        0.3
                                                                  *   IC=500 mA, IB= 50mA                                       2.0
     Base-emitter saturation voltage                VBE(sat)                                                                            V
                                                                      IC=150 mA, IB=15mA                                        1.2
                                                                      VCE=20V, IC= 20mA,
     Transition frequency                              fT                                              300                             MHz
                                                                      f=100MHz
     Delay time                                        td             VCC=30V, VBE(off)=-0.5V                                   10     nS
     Rise time                                         tr             IC=150mA , IB1= 15mA                                      25     nS
     Storage time                                      tS             VCC=30V, IC=150mA                                         225    nS
     Fall time                                         tf             IB1=-IB2=15mA                                             60     nS
*pulse test: Pulse Width 300s, Duty Cycle 2.0%.




 1




JinYu                                             www.htsemi.com
semiconductor

                                                                                                                   Date:201/5
                                 MMBT2222A




2




JinYu           www.htsemi.com
semiconductor

                                   Date:201/5



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