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TRANSISTPR(PNP)
SOT-23
FEATURES
Epitaxial planar die construction
Complementary NPN Type available(MMBT2222A) 1. BASE
2. EMITTER
Marking: 2F 3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -600 mA
PD Total Device Dissipation 250 mW
RJA Thermal Resistance Junction to Ambient 500 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO* IC=-10mA,IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -20 nA
Base cut-off current IEBO VCE=-3V, IC =0 -10 nA
Collector cut-off current ICEX VCE=-30 V, VBE(off) =-0.5V -50 nA
hFE(1) VCE=-10V,IC=-150mA 100 300
hFE(2) VCE=-10V,IC=-0.1mA 75
DC current gain hFE(3) VCE=-10V,IC=-1mA 100
hFE(4) VCE=-10V,IC=-10mA 100
hFE(5) VCE=-10V,IC=-500mA 50
VCE(sat)* IC=-150mA,IB=-15mA -0.4 V
Collector-emitter saturation voltage
VCE(sat)* IC=-500mA,IB=-50mA -1.6 V
VBE(sat)* IC=-150mA,IB=-15mA -1.3 V
Base-emitter saturation voltage
VBE(sat)* IC=-500mA,IB=-50mA -2.6 V
Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz 200 MHz
Delay time td 10 nS
VCE=-30V,IC=-150mA,B1=-15mA
Rise time tr 25 nS
Storage time tS VCE=-6V,IC=-150mA, 225 nS
Fall time tf IB1=- IB2=- 15mA 60 nS
*Pulse test: tp300S, 0.02.
JinYu www.htsemi.com
semiconductor
MMBT2907A
Typical Characteristics MMBT2907A
2
JinYu www.htsemi.com
semiconductor
Date:201/5
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