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mmbt4401


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                                                                                                              MMBT4401


TRANSISTOR(NPN)

                                                                                                        SOT-23
 FEATURES
 Switching transistor
                                                                                                        1. BASE
 MARKING: MMBT4401=2X                                                                                   2. EMITTER
                                                                                                        3. COLLECTOR
 MAXIMUM RATINGS (TA=25 unless otherwise noted)
 Symbol                     Parameter                     Value          Units
 VCBO         Collector-Base Voltage                       60                 V
 VCEO         Collector-Emitter Voltage                    40                 V
 VEBO         Emitter-Base Voltage                         6                  V
 IC           Collector Current -Continuous                600               mA
 PC           Collector Power dissipation                  0.3               W
 Tj           Junction Temperature                         150               
 Tstg         Storage Temperature                       -55to +150           
 RJA          Thermal Resistance, junction to Ambient      357          /mW



ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)


               Parameter                                             Symbol         Test   conditions       MIN                   MAX    UNIT

     Collector-base breakdown voltage                                V(BR)CBO     IC= 100A, IE=0             60                           V

     Collector-emitter breakdown voltage                             V(BR)CEO     IC= 1mA, IB=0              40                           V

     Emitter-base breakdown voltage                                  V(BR)EBO     IE= 100A, IC=0              6                           V

     Collector cut-off current                                         ICBO       VCB=50 V, IE=0                                  0.1     A

     Collector cut-off current                                         ICEO       VCE=30 V, IB=0                                  0.1     A

     Emitter cut-off current                                           IEBO       VEB=5V, IC=0                                    0.1     A

     DC current gain                                                   hFE        VCE=1V, IC=150mA          100                   300

     Collector-emitter saturation voltage                            VCE(sat)     IC=150mA, IB=15mA                               0.4     V

     Base-emitter saturation voltage                                 VBE(sat)     IC= 150mA, IB=15mA                              0.95    V

                                                                                  VCE= 10V, IC= 20mA
     Transition frequency                                               fT                                  250                          MHz
                                                                                  f = 100MHz


 1




JinYu                                               www.htsemi.com
semiconductor

                                                                                                                     Date:201/5
                                 MMBT4401




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JinYu           www.htsemi.com
semiconductor

                                   Date:201/5



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