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mmbt4403


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                                                                                                        MMBT4403

TRANSISTOR (PNP)

FEATURES
Switching transistor                                                                       SOT-23

MARKING MMBT4403=2T

                                                                                           1. BASE
MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                           2. EMITTER
     Symbol                    Parameter            Value      Units
                                                                                           3. COLLECTOR
     VCBO       Collector-Base Voltage               -40           V
     VCEO       Collector-Emitter Voltage            -40           V
     VEBO       Emitter-Base Voltage                 -5            V
     IC         Collector Current -Continuous        -0.6          A
     PC         Collector Power Dissipation          0.3           W
     Tj         Junction Temperature                 150           
     Tstg       Storage Temperature                -55-150         




 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                            Parameter                        Symbol        Test    conditions    MIN                     MAX     UNIT

     Collector-base breakdown voltage                         V(BR)CBO   IC=-100A , IE=0          -40                             V

     Collector-emitter breakdown voltage                      V(BR)CEO   IC= -1mA , IB=0          -40                             V

     Emitter-base breakdown voltage                           V(BR)EBO   IE=-100A, IC=0           -5                              V

     Collector cut-off current                                 ICBO      VCB=-35V, IE=0                                  -0.1    A

     Collector cut-off current                                 ICEO      VCE=-35 V, IB=0                                 -0.1    A

     Emitter cut-off current                                   IEBO      VEB=-4V,IC=0                                    -0.1    A


     DC current gain                                            hFE      VCE=-2V, IC= -150mA      100                    300

     Collector-emitter saturation voltage                    VCE(sat)    IC=-150mA, IB=-15mA                             -0.4     V

     Base-emitter saturation voltage                         VBE(sat)    IC=- 150mA, IB=-15mA                            -0.95    V

                                                                         VCE= -10V, IC= -20mA
     Transition frequency                                     fT                                  200                            MHz
                                                                         f = 100MHz




 1




 JinYu                                          www.htsemi.com
 semiconductor

                                                                                                          Date:2011/05
                                 MMBT4403




2




JinYu           www.htsemi.com
semiconductor

                                  Date:2011/05
                                 MMBT4403




3




JinYu           www.htsemi.com
semiconductor

                                  Date:2011/05



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