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mmbt5401


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                                                                                                        MMBT5401

TRANSISTOR(PNP)
                                                                                       SOT-23
FEATURES                                                                               1. BASE
                                                                                       2. EMITTER
   Complementary to MMBT5551
                                                                                       3. COLLECTOR
   Ideal for medium power amplification and switching
                                                                                  -




MARKING: 2L

MAXIMUM RATINGS (TA=25 unless otherwise noted)

     Symbol                      Parameter                  Value                     Units
     VCBO              Collector-Base Voltage                -160                      V
     VCEO              Collector-Emitter Voltage             -150                      V
     VEBO              Emitter-Base Voltage                   -5                       V
     IC                Collector Current -Continuous         -0.6                      A
     PC                Collector Power Dissipation            0.3                      W
     Tj                Junction Temperature                  150                       
     Tstg              Storage Temperature                  -55-150                    


     ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                                     Symbol        Test        conditions     MIN                   MAX    UNIT

     Collector-base breakdown voltage                         V(BR)CBO   IC= -100A,           IE=0    -160                          V

     Collector-emitter breakdown voltage                      V(BR)CEO   IC= -1mA,         IB=0       -150                          V

     Emitter-base breakdown voltage                           V(BR)EBO   IE= -10A, IC=0                -5                           V

     Collector cut-off current                                  ICBO     VCB=-120 V , IE=0                                  -0.1    A

     Emitter cut-off current                                    IEBO     VEB=-4V ,         IC=0                             -0.1    A

                                                                hFE1     VCE= -5V,       IC= -1mA      80

     DC current gain                                            hFE2     VCE= -5V,       IC=-10mA     100                   300

                                                                hFE3     VCE= -5V,       IC=-50mA      50

     Collector-emitter saturation voltage                     VCE(sat)   IC=-50 mA, IB= -5mA                                -0.5    V

     Base-emitter saturation voltage                          VBE(sat)   IC= -50 mA, IB= -5mA                               -1      V

                                                                         VCE= -5V,       IC= -10mA
     Transition frequency                                           fT                                100                          MHz
                                                                         f=30MHz




 1




 JinYu                                             www.htsemi.com
 semiconductor

                                                                                                             Date:2011/05
                                 MMBT5401




2




JinYu           www.htsemi.com
semiconductor

                                   Date:2011/05



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