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mmbt589


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                                                                                                   MMBT58 9


TRANSISTOR(PNP)                                                                       SOT-23


FEATURES
   High current surface mount PNP silicon switching transistor for
   Load management in portable applications
                                                                                      1. BASE

MARKING :589                                                                          2. EMITTER
                                                                                      3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                     Parameter                        Value            Units
VCBO       Collector-Base Voltage                               -50            V
VCEO       Collector-Emitter Voltage                            -30            V
VEBO       Emitter-Base Voltage                                 -5             V
IC         Collector Current -Continuous                        -1             A
PC         Collector Power Dissipation                          310           mW
RJA        Thermal Resistance, junction to Ambient              403           /W
TJ         Junction Temperature                                 150            
Tstg       Storage Temperature                              -55-150            


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

          Parameter                        Symbol               Test     conditions    MIN      TYP                MAX     UNIT
Collector-base breakdown voltage           V(BR)CBO    IC=-100A,IE=0                    -50                                 V
Collector-emitter breakdown voltage        V(BR)CEO    IC=-10mA,IB=0                    -30                                 V
Emitter-base breakdown voltage             V(BR)EBO    IE=-100A,IC=0                    -5                                  V
Collector cut-off current                    ICBO      VCB=-30V,IE=0                                               -0.1    A
Collector-emitter cut-off current            ICES      VCES=-30V                                                   -0.1    A
Emitter cut-off current                      IEBO      VEB=-4V,IC=0                                                -0.1    A
                                             hFE1      VCE=-2V,IC=-1mA                 100
                                             hFE2      VCE=-2V,IC=-500mA               100                         300
DC current gain
                                             hFE3      VCE=-2V,IC=-1A                   80
                                             hFE4      VCE=-2V,IC=-2A                   40
                                           VCE(sat)1   IC= -500mA, IB=-50mA                                        -0.25    V
Collector-emitter saturation voltage       VCE(sat)2   IC= -1A, IB=-100mA                                          -0.3     V
                                           VCE(sat)3   IC= -2A, IB=-200mA                                          -0.65    V
Base-emitter saturation voltage            VBE(sat)    IC= -1A, IB=-100mA                                          -1.2     V
Base-emitter Turn-on voltage               VBE(on)     VCE=-2V, IC=-1A                                             -1.1     V
                                                       VCE=-5V, IC=-100mA ,
Transition frequency                        fT                                         100                                 MHz
                                                       f =100MHz
Collector Output Capacitance               Cob         f=1MHz                                                       15     pF


     1




 JinYu                                           www.htsemi.com
 semiconductor

                                                                                                      Date:201/5
                                 MMBT58 9




2




JinYu           www.htsemi.com
semiconductor

                                  Date:201/5



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