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mmbta05


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                                                                                                          MMBTA05



TRANSISTOR(NPN)
                                                                                         SOT-23

FEATURES
Driver transistor                                                                        1. BASE
                                                                                         2. EMITTER
                                                                                         3. COLLECTOR
MARKING :1H

MAXIMUM RATINGS (TA=25 unless otherwise noted)

 Symbol                           Parameter                    Value           Units
VCBO              Collector-Base Voltage                         60             V
VCEO              Collector-Emitter Voltage                      60             V
VEBO              Emitter-Base Voltage                           4              V
IC                Collector Current -Continuous                  0.5            A
PC                Collector Power Dissipation                   300             mW
TJ                Junction Temperature                          150             
Tstg              Storage Temperature                          -55-150          




ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                   Parameter                        Symbol           Test   conditions      MIN         TYP                MAX    UNIT

         Collector-base breakdown voltage           V(BR)CBO    IC= 100A, IE=0               60                                    V

         Collector-emitter breakdown voltage        V(BR)CEO    IC= 1mA, IB=0                60                                    V

         Emitter-base breakdown voltage             V(BR)EBO    IE=100A, IC=0                 4                                    V

         Collector cut-off current                    ICBO      VCB=60V, IE=0                                              0.1    A

         Collector cut-off current                    ICEO      VCE=60V, IB=0                                              0.1    A

         Collector cut-off current                    IEBO      VEB=3V, IC=0                                               0.1    A

                                                      hFE1      VCE=1V, IC= 10mA            100                            400
         DC current gain
                                                      hFE2      VCE=1V, IC= 100mA           100

         Collector-emitter saturation voltage       VCE(sat)    IC=100mA, IB=10mA                                          0.25    V

         Base-emitter   voltage                       VBE       VCE=1V, IC= 100mA                                          1.2     V

                                                                VCE= 2V, IC=10mA
         Transition frequency                          fT                                   100                                   MHz
                                                                f=100MHz


     1




 JinYu                                            www.htsemi.com
 semiconductor

                                                                                                              Date:201/5
                                 MMBTA05




2




JinYu           www.htsemi.com
semiconductor

                                  Date:201/5



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