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                                                                                                                     MMBTA42


TRANSISTOR(NPN)

FEATURES
   High breakdown voltage                                                                        SOT-23
   Low collector-emitter saturation voltage
   Complementary to MMBTA92 (PNP)                                                                1. BASE
                                                                                                 2. EMITTER

                                                                                                 3. COLLECTOR
Marking: 1D

      MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol                      Parameter                     Value         Units
VCBO          Collector-Base Voltage                       300               V
VCEO          Collector-Emitter Voltage                    300               V
VEBO          Emitter-Base Voltage                          5                V
IC            Collector Current -Continuous                0.3               A
PC            Collector Power dissipation                 0.35               W
RJA           Thermal Resistance, junction to Ambient      357          /mW
TJ            Junction Temperature                         150               
Tstg          Storage Temperature                       -55to +150           




ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                Parameter                                            Symbol        Test    conditions         MIN                    MAX    UNIT

     Collector-base breakdown voltage                                V(BR)CBO    IC= 100A,    IE=0              300                          V

     Collector-emitter breakdown voltage                             V(BR)CEO    IC= 1mA, IB=0                  300                          V

     Emitter-base breakdown voltage                                  V(BR)EBO    IE= 100A, IC=0                  5                           V

     Collector cut-off current                                         ICBO      VCB=200V, IE=0                                      0.25    A

     Emitter cut-off current                                           IEBO      VEB= 5V, IC=0                                       0.1     A

                                                                      hFE(1)     VCE= 10V, IC= 1mA              60

     DC current gain                                                  hFE(2)     VCE= 10V, IC=10mA              100                  200

                                                                      hFE(3)     VCE=10V, IC=30mA               60

     Collector-emitter saturation voltage                            VCE(sat)    IC=20mA, IB= 2mA                                    0.2     V

     Base-emitter saturation voltage                                 VBE(sat)    IC= 20mA, IB=2mA                                    0.9     V
                                                                                 VCE= 20V, IC= 10mA,
     Transition frequency                                               fT                                      50                          MHz
                                                                                 f=30MHz


 1




JinYu                                               www.htsemi.com
semiconductor

                                                                                                                      Date:2011/05
                                 MMBTA42




2




JinYu           www.htsemi.com
semiconductor

                                  Date:2011/05
                                 MMBTA42




3




JinYu           www.htsemi.com
semiconductor

                                  Date:2011/05

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