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mmst2222a


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                                                                                                              MMST2222A



TRANSISTOR(NPN)
                                                                                             SOT-323



FEATURES
     Epitaxial planar die construction
     Complementary PNP Type available(MMST2907A)                                             1. BASE

MARKING: K3P                                                                                 2. EMITTER

                                                                                             3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)

       Symbol                                    Parameter                                         Value                            Units
VCBO                    Collector-Base Voltage                                                          75                            V
VCEO                    Collector-Emitter Voltage                                                       40                            V
VEBO                    Emitter-Base Voltage                                                             6                            V
IC                      Collector Current -Continuous                                                  600                           mA
PC                      Collector Dissipation                                                          200                           mW
TJ                      Junction Temperature                                                           150                               
Tstg                    Storage Temperature                                                       -55to+150                              


ELECTRICAL CHARACTERISTICS (Tamb=25                                unless     otherwise specified)
                Parameter                               Symbol       Test   conditions           MIN          TYP                  MAX      UNIT

      Collector-base breakdown voltage                  V(BR)CBO   IC= 10A, IE=0                   75                                         V
      Collector-emitter breakdown voltage               V(BR)CEO   IC= 10mA, IB=0                  40                                         V
      Emitter-base breakdown voltage                    V(BR)EBO   IE=10A, IC=0                    6                                         V
      Collector cut-off current                           ICBO     VCB=70 V, IE=0                                                  100       nA
      Collector cut-off current                           ICEO     VCE=35V , IB=0                                                  100       nA
      Emitter cut-off current                             IEBO     VEB= 3V , IC=0                                                  100       nA
                                                         hFE(1)    VCE=10V, IC=0.1mA               35
                                                         hFE(2)    VCE=10V, IC= 1mA                50
                                                         hFE(3)    VCE=10V, IC= 10mA               75
      DC current gain
                                                         hFE(4)    VCE=10V, IC= 150mA             100                              300
                                                         hFE(5)    VCE=10V, IC= 500mA              40
                                                         hFE(6)    VCE=1V, IC= 150mA               35
                                                                   IC=500 mA, IB= 50mA                                              1
      Collector-emitter saturation voltage              VCE(sat)                                                                             V
                                                                   IC=150 mA, IB=15mA                                              0.3
                                                                   IC=500 mA, IB= 50mA                                             2.0
      Base-emitter saturation voltage                   VBE(sat)                                                                             V
                                                                   IC=150 mA, IB=15mA                                              1.2
                                                                   VCE=20V, IC= 20mA
      Transition frequency                                 fT                                     300                                       MHz
                                                                   f=100MHz
      Output Capacitance                                  Cob      VCB=10V, IE= 0,f=1MHz                                            8        pF
      Delay time                                           td      VCC=30V, VBE(off)=-0.5V                                          10       nS
      Rise time                                            tr      IC=150mA , IB1= 15mA                                             25       nS
      Storage time                                         tS      VCC=30V, IC=150mA                                               225       nS
      Fall time                                            tf      IB1=-IB2=15mA                                                    60       nS




  1




 JinYu                                            www.htsemi.com
 semiconductor

                                                                                                                    Date:2011/05
                                                   MMST2222A
        Typical Characteristics




2




JinYu                             www.htsemi.com
semiconductor

                                                     Date:201/5



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