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mmst2907a


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                                                                                            MMST2907 A


TRANSISTOR(PNP)
FEATURES
                                                                                          SOT-323
     Epitaxial planar die construction
     Complementary PNP Type available(MMST2222A)
MARKING:K3F
                                                                                          1. BASE
MAXIMUM RATINGS(TA=25 unless otherwise noted)                                             2. EMITTER
                                                                                          3. COLLECTOR
 Symbol                      Parameter                      Value          Units
VCBO           Collector-Base Voltage                          -60            V
VCEO           Collector-Emitter Voltage                       -60            V
VEBO           Emitter-Base Voltage                             -5            V
IC             Collector Current -Continuous                   -0.6           A
PC             Collector Dissipation                           0.2            W
TJ             Junction Temperature                            150            
Tstg           Storage Temperature                       -55 to +150          

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                    Symbol       Test     conditions                MIN         TYP            MAX    UNIT
 Collector-base breakdown voltage          V(BR)CBO   IC=-10A,IE=0                         -60                                V
 Collector-emitter breakdown voltage       V(BR)CEO   IC=-10mA,IB=0                        -60                                V
 Emitter-base breakdown voltage            V(BR)EBO   IE=-10A,IC=0                          -5                                V
 Collector cut-off current                   ICBO     VCB=-50V,IE=0                                                   -100   nA
 Collector cut-off current                   ICES     VCB=-30V,IB=0                                                   -100   nA
 Emitter cut-off current                     IEBO     VEB=-3V,IC=0                                                    -100   nA
                                            hFE(1)    VCE=-10V,IC=-0.1mA                    75
                                            hFE(2)    VCE=-10V,IC=-1mA                     100
 DC current gain                            hFE(3)    VCE=-10V,IC=-10mA                    100
                                            hFE(4)    VCE=-10V,IC=-150mA                   100                        300
                                            hFE(5)    VCE=-10V,IC=-500mA                    50
                                           VCE(sat)   IC=-150mA,IB=-15mA                                              -0.4    V
 Collector-emitter saturation voltage
                                           VCE(sat)   IC=-500mA,IB=-50mA                                              -1.6    V
                                           VBE(sat)   IC=-150mA,IB=-15mA                   -0.6                       -1.3    V
 Base-emitter saturation voltage
                                           VBE(sat)   IC=-500mA,IB=-50mA                                              -2.6    V
 Transition frequency                          fT     VCE=-20V,IC=-50mA,f=100MHz           200                               MHz
 Output capacitance                         Cobo      VCB=-10V,IE=0,f=0.1MHz                                           8     pF
 Input capacitance                           Cib      VEB=-2V,IC=0,f=0.1MHz                                           30     pF
 Delay time                                    td     VCC=-30V,VBE(off)=-1.5V,IC=-150mA                               10     nS
 Rise time                                     tr     IB1==- 15mA                                                     40     nS
 Storage time                                  tS                                                                     80     nS
                                                      VCC=-30V,IC=-150mA,IB1=-IB2=-15mA
 Fall time                                     tf                                                                     30     nS

 1




 JinYu                                     www.htsemi.com
 semiconductor

                                                                                                       Date:2011/05
                                 MMST2907 A




2




JinYu           www.htsemi.com
semiconductor

                                     Date:2011/05



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