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MMST2907 A
TRANSISTOR(PNP)
FEATURES
SOT-323
Epitaxial planar die construction
Complementary PNP Type available(MMST2222A)
MARKING:K3F
1. BASE
MAXIMUM RATINGS(TA=25 unless otherwise noted) 2. EMITTER
3. COLLECTOR
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -60 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.6 A
PC Collector Dissipation 0.2 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA
Collector cut-off current ICES VCB=-30V,IB=0 -100 nA
Emitter cut-off current IEBO VEB=-3V,IC=0 -100 nA
hFE(1) VCE=-10V,IC=-0.1mA 75
hFE(2) VCE=-10V,IC=-1mA 100
DC current gain hFE(3) VCE=-10V,IC=-10mA 100
hFE(4) VCE=-10V,IC=-150mA 100 300
hFE(5) VCE=-10V,IC=-500mA 50
VCE(sat) IC=-150mA,IB=-15mA -0.4 V
Collector-emitter saturation voltage
VCE(sat) IC=-500mA,IB=-50mA -1.6 V
VBE(sat) IC=-150mA,IB=-15mA -0.6 -1.3 V
Base-emitter saturation voltage
VBE(sat) IC=-500mA,IB=-50mA -2.6 V
Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz 200 MHz
Output capacitance Cobo VCB=-10V,IE=0,f=0.1MHz 8 pF
Input capacitance Cib VEB=-2V,IC=0,f=0.1MHz 30 pF
Delay time td VCC=-30V,VBE(off)=-1.5V,IC=-150mA 10 nS
Rise time tr IB1==- 15mA 40 nS
Storage time tS 80 nS
VCC=-30V,IC=-150mA,IB1=-IB2=-15mA
Fall time tf 30 nS
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
MMST2907 A
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
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