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mmsta42


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                                                                                                           MMSTA42



TRANSISTOR(NPN)

                                                                                        SOT-323

FEATURES
                                                                                        1. BASE
       High breakdown voltage                                                           2. EMITTER
       Low collector-emitter saturation voltage                                         3. COLLECTOR

       Complementary to MMSTA92(PNP)


MARKING:K3M
MAXIMUM RATINGS (TA=25 unless otherwise noted)
     Symbol               Parameter                Value          Units
VCBO           Collector-Base Voltage                  300             V
VCEO           Collector-Emitter Voltage               300             V
VEBO           Emitter-Base Voltage                      5             V
IC             Collector Current -Continuous            0.3            A
PC             Collector Power Dissipation              0.3            W
Tj             Junction Temperature                    150             
Tstg           Storage Temperature                -55-150              

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

              Parameter                        Symbol           Test       conditions                MIN   TYP              MAX    UNIT

Collector-base breakdown voltage               V(BR)CBO       IC=100A,IE=0                           300                            V

Collector-emitter breakdown voltage            V(BR)CEO       IC=1mA,IB=0                            300                            V

Emitter-base breakdown voltage                 V(BR)EBO       IE=100A,IC=0                            5                             V

Collector cut-off current                        ICBO         VCB=200V,IE=0                                                 0.25   A

Emitter cut-off current                          IEBO         VEB=5V,IC=0                                                   0.1    A

                                                hFE(1)        VCE=10V,IC=1mA                         60

DC current gain                                 hFE(2)        VCE=10V,IC=10mA                        100                    200

                                                hFE(3)        VCE=10V,IC=30mA                        75

Collector-emitter saturation voltage           VCE(sat)       IC=20mA,IB=2mA                                                0.2     V

Base-emitter saturation voltage                VBE(sat)       IC=20mA,IB=2mA                                                0.9     V

Transition frequency                              fT          VCE=20V,IC=10mA,f=30MHz                50                            MHz



 1




JinYu                                           www.htsemi.com
semiconductor

                                                                                                             Date:2011/05
                                 MMST5551




2




JinYu           www.htsemi.com
semiconductor

                                   Date:2011/05
                                 MMST5551




3




JinYu           www.htsemi.com
semiconductor

                                   Date:2011/05



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