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pxt8050


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                                                                                                          PXT8 050


TRANSISTOR(NPN)
                                                                                          SOT-89


FEATURES
   Compliment to PXT8550

                                                                                          1. BASE
MARKING: Y1
                                                                                          2. COLLECTOR

MAXIMUM RATINGS (TA=25 unless otherwise noted)                                            3. EMITTER


Symbol                     Parameter             Value      Units
VCBO             Collector-Base Voltage            40         V
VCEO             Collector-Emitter Voltage         25         V
VEBO             Emitter-Base Voltage               6         V
IC               Collector Current -Continuous     1.5        A
PC               Collector Power dissipation       0.5        W
TJ               Junction Temperature              150        
Tstg             Storage Temperature             -55-150      
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
                  Parameter                      Symbol       Test    conditions               MIN       TYP                MAX     UNIT

 Collector-base breakdown voltage                V(BR)CBO   IC=100uA, IE=0                     40                                    V

 Collector-emitter breakdown voltage             V(BR)CEO   IC=0.1mA, IB=0                     25                                    V

 Emitter-base breakdown voltage                  V(BR)EBO   IE=100A, IC=0                       5                                    V

 Collector cut-off current                         ICBO     VCB=40V, IE=0                                                    0.1    A

 Emitter cut-off current                           ICEO     VCE=20V, IE=0                                                    0.1    A

 Emitter cut-off current                           IEBO     VEB=5V, IC=0                                                     0.1    A

                                                  hFE(1)    VCE=1V, IC=100mA                   85                            400
 DC current gain
                                                  hFE(2)    VCE=1V, IC=800mA                   40

 Collector-emitter saturation voltage            VCE(sat)   IC=800mA, IB=80mA                                                0.5     V

 Base-emitter saturation voltage                 VBE(sat)   IC=800mA, IB=80mA                                                1.2     V

 Base-emitter voltage                              VBE      VCE=1V, IC=10mA                                                   1      V

 Base-emitter positive favor voltage              VBEF      IB=1A                                                            1.55    V

 Transition frequency                               fT      VCE=10V,IC=50mA,f=30MHz            100                                  MHz

 output capacitance                                Cob      VCB=10V,IE=0,f=1MHz                                              15     pF
CLASSIFICATION OF hFE(1)
         Rank                             B                   C                       D                                     D3

         Range                       85-160                 120-200                160-300                                300-400


     1




 JinYu                                            www.htsemi.com
 semiconductor

                                                                                                           Date:2011/05
                                 PXT8 050




2




JinYu           www.htsemi.com
semiconductor

                                 Date:2011/05



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