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TRANSISTOR(NPN)                                                                             SOT-89

                                                                                            1. BASE

FEATURES                                                                                                      1
                                                                                            2. COLLECTOR
          Compliment to PXT3906
          Low current                                                                       3. EMITTER                3
          Low voltage
MAXIMUM RATINGS (TA=25 unless otherwise noted)
     Symbol              Parameter                 Value        Units
     VCBO       Collector-Base Voltage                  60        V
     VCEO       Collector-Emitter Voltage               40        V
     VEBO       Emitter-Base Voltage                    6         V
     IC         Collector Current -Continuous           0.2       A
     PC         Collector Power Dissipation             0.5      W
     TJ         Junction Temperature                150          
     Tstg       Storage Temperature               -55-150        

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                        Symbol                  Test   conditions             MIN             TYP                MAX    UNIT
Collector-base breakdown voltage                V(BR)CBO      IC=10A,IE=0                                60                                      V
Collector-emitter breakdown voltage             V(BR)CEO      IC=1mA,IB=0                                40                                      V
Emitter-base breakdown voltage                  V(BR)EBO      IE=10A,IC=0                                6                                       V
Collector cut-off current                         ICBO        VCB=30V,IE=0                                                               0.05   A
cut-off current                                   IEBO        VEB=6V,IC=0                                                                0.05   A
                                                 hFE(1)       VCE=1V,IC=0.1mA                            60
                                                 hFE(2)       VCE=1V,IC=1mA                              80
DC current gain                                  hFE(3)       VCE=1V,IC=10mA                          100                                300
                                                 hFE(4)       VCE=1V,IC=50mA                             60
                                                 hFE(5)       VCE=1V,IC=100mA                            30
                                                VCE(sat)1     IC=10mA,IB=1mA                                                             0.2     V
Collector-emitter saturation voltage
                                                VCE(sat)2     IC=50mA,IB=5mA                                                             0.3     V
                                                VBE(sat)1     IC=10mA,IB=1mA                          0.65                               0.85    V
Base-emitter saturation voltage
                                                VBE(sat)2     IC=50mA,IB=5mA                                                             0.95    V
Transition frequency                               fT         VCE=20V,IC=10mA,f=100MHz                300                                       MHz
Collector capacitance                              Cc         VCB=5V,IE=0,f=1MHz                                                          4     pF
Emitter capacitance                                Ce         VEB=0.5V,IC=0,f=1MHz                                                        8     pF
Noise figure                                      NF                                                                                      5     dB
Delay time                                         td                                                                                    35     nS
Rise time                                          tr                                                                                    35     nS
                                                              IC=10mA , IB1=-IB2= 1mA
Storage time                                       tS                                                                                    200    nS
Fall time                                          tf                                                                                    50     nS




Typical         characteristics




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