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PXT3904
TRANSISTOR(NPN) SOT-89
1. BASE
FEATURES 1
2. COLLECTOR
Compliment to PXT3906
2
Low current 3. EMITTER 3
Low voltage
MARKING: 1A
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.2 A
PC Collector Power Dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=10A,IC=0 6 V
Collector cut-off current ICBO VCB=30V,IE=0 0.05 A
cut-off current IEBO VEB=6V,IC=0 0.05 A
hFE(1) VCE=1V,IC=0.1mA 60
hFE(2) VCE=1V,IC=1mA 80
DC current gain hFE(3) VCE=1V,IC=10mA 100 300
hFE(4) VCE=1V,IC=50mA 60
hFE(5) VCE=1V,IC=100mA 30
VCE(sat)1 IC=10mA,IB=1mA 0.2 V
Collector-emitter saturation voltage
VCE(sat)2 IC=50mA,IB=5mA 0.3 V
VBE(sat)1 IC=10mA,IB=1mA 0.65 0.85 V
Base-emitter saturation voltage
VBE(sat)2 IC=50mA,IB=5mA 0.95 V
Transition frequency fT VCE=20V,IC=10mA,f=100MHz 300 MHz
Collector capacitance Cc VCB=5V,IE=0,f=1MHz 4 pF
Emitter capacitance Ce VEB=0.5V,IC=0,f=1MHz 8 pF
VCE=5V,Ic=0.1mA,f=10Hz-15.7kHz,
Noise figure NF 5 dB
RS=1K
Delay time td 35 nS
Rise time tr 35 nS
IC=10mA , IB1=-IB2= 1mA
Storage time tS 200 nS
Fall time tf 50 nS
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
PXT3904
Typical characteristics
2
JinYu www.htsemi.com
semiconductor
Date:2011/05
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