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pxt3906


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                                                                                                                          PXT3906


TRANSISTOR(PNP)
                                                                                                SOT-89
FEATURES
          Compliment to PXT3904                                                                 1. BASE
          Low current
                                                                                                                  1
          Low voltage                                                                           2. COLLECTOR

MARKING: 2A                                                                                                           2
MAXIMUM RATINGS (TA=25 unless otherwise noted)
                                                                                                3. EMITTER                3
     Symbol                Parameter                     Value         Units
     VCBO       Collector-Base Voltage                    -40            V
     VCEO       Collector-Emitter Voltage                 -40            V
     VEBO       Emitter-Base Voltage                        -6           V
     IC         Collector Current -Continuous             -0.2           A
     PC         Collector Power Dissipation               0.5            W
     TJ         Junction Temperature                      150            
     Tstg       Storage Temperature                     -55-150          


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

               Parameter                        Symbol                    Test     conditions             MIN             TYP                MAX     UNIT
Collector-base breakdown voltage                V(BR)CBO         IC=-10A,IE=0                             -40                                         V
Collector-emitter breakdown voltage             V(BR)CEO         IC=-1mA,IB=0                             -40                                         V
Emitter-base breakdown voltage                  V(BR)EBO         IE=-10A,IC=0                                -6                                       V
Collector cut-off current                         ICBO           VCB=-30V,IE=0                                                               -0.05   A
cut-off current                                   IEBO           VEB=-6V,IC=0                                                                -0.05   A
                                                 hFE(1)          VCE=-1V,IC=-0.1mA                           60
                                                 hFE(2)          VCE=-1V,IC=-1mA                             80
DC current gain                                  hFE(3)          VCE=-1V,IC=-10mA                         100                                300
                                                 hFE(4)          VCE=-1V,IC=-50mA                            60
                                                 hFE(5)          VCE=-1V,IC=-100mA                           30
                                                VCE(sat)1        IC=-10mA,IB=-1mA                                                            -0.25    V
Collector-emitter saturation voltage
                                                VCE(sat)2        IC=-50mA,IB=-5mA                                                            -0.4     V
                                                VBE(sat)1        IC=-10mA,IB=-1mA                         -0.65                              -0.85    V
Base-emitter saturation voltage
                                                VBE(sat)2        IC=-50mA,IB=-5mA                                                            -0.95    V
Transition frequency                               fT            VCE=-20V,IC=-10mA,f=100MHz               250                                        MHz
Collector capacitance                              Cc            VCB=-5V,IE=0,f=1MHz                                                         4.5      pF
Emitter capacitance                               Ce             VEB=-0.5V,IC=0,f=1MHz                                                        10      pF
                                                                 VCE=-5V,Ic=-0.1mA,f=10Hz-15.7kHz,
Noise figure                                      NF                                                                                          4      dB
                                                                 RS=1K
Delay time                                         td                                                                                         35     nS
Rise time                                          tr                                                                                         35     nS
                                                                 IC=-10mA , IB1=-IB2= -1mA
Storage time                                       tS                                                                                        225     nS
Fall time                                          tf                                                                                         75     nS
 1




JinYu                                              www.htsemi.com
semiconductor

                                                                                                                              Date:2011/05
                                              PXT3906



Typical         characteristics




2




JinYu                        www.htsemi.com
semiconductor

                                               Date:2011/05



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