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                                                                                                                     S8 050

TRANSISTOR(NPN)
                                                                                           SOT-23

FEATURES
    Complimentary to S8550
                                                                                           1. BASE
    Collector Current: IC=0.5A                                                             2. EMITTER
                                                                                           3. COLLECTOR
MARKING: J3Y



MAXIMUM RATINGS (TA=25 unless otherwise noted)
            Symbol                                 Parameter                                     Value                                Units
     VCBO              Collector-Base Voltage                                                        40                                   V
     VCEO              Collector-Emitter Voltage                                                     25                                   V
     VEBO              Emitter-Base Voltage                                                          5                                    V
     IC                Collector Current -Continuous                                                 0.5                                  A
     PC                Collector Dissipation                                                         0.3                                  W
     Tj                Junction Temperature                                                          150                                  
     Tstg              Storage Temperature                                                      -55-150                                   

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                 Parameter                              Symbol      Test      conditions      MIN              TYP                  MAX       UNIT

     Collector-base breakdown voltage                  V(BR)CBO   IC= 100A, IE=0               40                                             V

     Collector-emitter breakdown voltage               V(BR)CEO   IC=1mA, IB=0                 25                                             V

     Emitter-base breakdown voltage                    V(BR)EBO   IE=100A, IC=0                 5                                             V

     Collector cut-off current                           ICBO     VCB=40 V , IE=0                                                   0.1       A

     Collector cut-off current                           ICEO     VCB=20V ,     IE=0                                                0.1       A

     Emitter cut-off current                             IEBO     VEB= 5V ,     IC=0                                                0.1       A

                                                         HFE(1)   VCE=1V,     IC= 50mA         120                                  350
     DC current gain
                                                         HFE(2)   VCE=1V,     IC= 500mA        50

     Collector-emitter saturation voltage              VCE(sat)   IC=500 mA, IB= 50mA                                               0.6       V

     Base-emitter saturation voltage                   VBE(sat)   IC=500 mA, IB= 50mA                                               1.2       V

                                                                  VCE=6V,     IC= 20mA
     Transition frequency                                fT                                    150                                            MHz
                                                                  f=30MHz
CLASSIFICATION OF                hFE(1)
     Rank                                          L                                                       H
     Range                                     120-200                                               200-350

 1




 JinYu                                             www.htsemi.com
 semiconductor

                                                                                                                     Date:2011/05
                                 S8 050




2




JinYu           www.htsemi.com
semiconductor

                                 Date:2011/05

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