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s8550


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                                                                                                                                   S8 550
                                                                                                                                   S901 2

                                                                                              SOT-23
TRANSISTOR(PNP)
FEATURES
   Complimentary to S8050
                                                                                              1. BASE
          Collector current: IC=0.5A
                                                                                              2. EMITTER
                                                                                              3. COLLECTOR
MARKING :            2TY



MAXIMUM RATINGS (TA=25 unless otherwise noted)

            Symbol                                  Parameter                                      Value                              Units
     VCBO              Collector-Base Voltage                                                        -40                                  V
     VCEO              Collector-Emitter Voltage                                                     -25                                  V
     VEBO              Emitter-Base Voltage                                                          -5                                   V
     IC                    Collector Current -Continuous                                            -0.5                                  A
     PC                Collector Power Dissipation                                                   0.3                                  W
     Tj                Junction Temperature                                                         150                                   
     Tstg              Storage Temperature                                                         -55-150                                

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                 Parameter                                       Symbol      Test    conditions               MIN                  MAX        UNIT

     Collector-base breakdown voltage                           V(BR)CBO   IC = -100A,      IE=0              -40                             V

     Collector-emitter breakdown voltage                        V(BR)CEO   IC =-1mA, IB=0                     -25                             V

     Emitter-base breakdown voltage                             V(BR)EBO   IE= -100A, IC=0                     -5                             V

     Collector cut-off current                                    ICBO     VCB= -40V, IE=0                                         -0.1       A

     Collector cut-off current                                    ICEO     VCE= -20V, IB=0                                         -0.1       A

     Emitter cut-off current                                      IEBO     VEB= -3V, IC=0                                          -0.1       A

                                                                 hFE(1)    VCE= -1V, IC= -50mA                120                  400
     DC current gain
                                                                 hFE(2)    VCE= -1V, IC= -500mA               50

     Collector-emitter saturation voltage                       VCE(sat)   IC=-500mA, IB= -50mA                                    -0.6       V

     Base-emitter saturation voltage                            VBE(sat)   IC=-500mA, IB= -50mA                                    -1.2       V

                                                                           VCE= -6V, IC= -20mA
     Transition frequency                                        fT                                           150                             MHz
                                                                           f=30MHz

 CLASSIFICATION OF                 hFE(1)
     Rank                                            L                                                    H
     Range                                       120-200                                           200-350

 1




 JinYu                                              www.htsemi.com
 semiconductor

                                                                                                                    Date:2011/05
                                                S901 2
                                                S8 550




2




JinYu           www.htsemi.com
semiconductor

                                 Date:2011/05



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