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s9013


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                                                                                                                                     S901 3


TRANSISTOR(NPN)                                                                                  SOT-23

FEATURES                                                                                         1. BASE
   Complementary to S9012                                                                        2. EMITTER
   Excellent hFE linearity                                                                       3. COLLECTOR



MARKING: J3

MAXIMUM RATINGS (TA=25 unless otherwise noted)

          Symbol                           Parameter                         Value      Units
VCBO                     Collector-Base Voltage                               40             V
VCEO                     Collector-Emitter Voltage                            25             V
VEBO                     Emitter-Base Voltage                                 5              V
IC                       Collector Current -Continuous                       500         mA
PC                       Collector Power Dissipation                         300         mW
Tj                       Junction Temperature                                150             
Tstg                     Storage Temperature                             -55-150             


ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

                   Parameter                              Symbol      Test     conditions         MIN           TYP                  MAX   UNIT

         Collector-base breakdown voltage                V(BR)CBO   IC= 100A, IE=0                  40                                      V

         Collector-emitter breakdown voltage             V(BR)CEO   IC= 0.1mA, IB=0                 25                                      V

         Emitter-base breakdown voltage                  V(BR)EBO   IE=100A, IC=0                    5                                      V

         Collector cut-off current                         ICBO     VCB=40V, IE=0                                                    0.1    A

         Collector cut-off current                         ICEO     VCE=20V, IB=0                                                    0.1    A

         Emitter cut-off current                           IEBO     VEB= 5V, IC=0                                                    0.1    A

                                                           hFE(1)   VCE=1V, IC= 50mA               120                               400
         DC current gain
                                                           hFE(2)   VCE=1V, IC=500mA                40

         Collector-emitter saturation voltage            VCE(sat)   IC=500mA, IB= 50mA                                               0.6    V

         Base-emitter saturation voltage                 VBE(sat)   IC=500mA, IB= 50mA                                               1.2    V
                                                                    VCE=6V,       IC= 20mA
         Transition frequency                              fT                                      150                                     MHz
                                                                    f=30MHz


 CLASSIFICATION OF                   hFE(1)
    Rank                                 L                                     H                                             J
            Range                    120-200                            200-350                                   300-400


     1




 JinYu                                                 www.htsemi.com
 semiconductor

                                                                                                                      Date:2011/05
                                                 S901 3




2




JinYu           www.htsemi.com
semiconductor

                                 Date:2011/05




                                                A,Apr,2011



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