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                                                                                                                                  S901 4


 TRANSISTOR (NPN)                                                                       SOT-23


                                                                                        1. BASE
FEATURES
                                                                                        2. EMITTER
   Complementary to S9015                                                               3. COLLECTOR



MARKING: J6

MAXIMUM RATINGS (TA=25 unless otherwise noted)

      Symbol                                       Parameter                                Value                                 Units
 VCBO                  Collector-Base Voltage                                                     50                                    V
 VCEO                  Collector-Emitter Voltage                                                  45                                    V
 VEBO                  Emitter-Base Voltage                                                       5                                     V
 IC                    Collector Current -Continuous                                              0.1                                   A
 PC                    Collector Power Dissipation                                                0.2                                   W
 Tj                    Junction Temperature                                                       150                                   
 Tstg                  Storage Temperature                                                  -55-150                                     

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
               Parameter                               Symbol     Test   conditions         MIN            TYP                    MAX       UNIT

     Collector-base breakdown voltage                  V(BR)CBO   IC= 100A,     IE=0         50                                              V

     Collector-emitter breakdown voltage               V(BR)CEO   IC= 0.1mA, IB=0            45                                              V

     Emitter-base breakdown voltage                    V(BR)EBO   IE=100A, IC=0               5                                              V

     Collector cut-off current                           ICBO     VCB=50 V , IE=0                                                 0.1       A

     Collector cut-off current                           ICEO     VCE=35V ,    IB=0                                               0.1       A

     Emitter cut-off current                             IEBO     VEB= 3V ,     IC=0                                              0.1       A

     DC current gain                                        hFE   VCE=5V,     IC= 1mA       200                                   1000

     Collector-emitter saturation voltage              VCE(sat)   IC=100 mA, IB= 5mA                                              0.3        V

     Base-emitter saturation voltage                   VBE(sat)   IC=100 mA, IB= 5mA                                               1         V

                                                                  VCE=5V, IC= 10mA
     Transition frequency                                   fT                              150                                             MHz
                                                                  f=30MHz

      CLASSIFICATION OF            hFE
     Rank                                               L                                                  H
     Range                                          200-450                                             450-1000


 1




 JinYu                                               www.htsemi.com
 semiconductor

                                                                                                                   Date:2011/05
                                              S901 4




2




JinYu           www.htsemi.com
semiconductor

                                 Date:201/5

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